GB1524685A - Charge-transfer devices - Google Patents
Charge-transfer devicesInfo
- Publication number
- GB1524685A GB1524685A GB38587/75A GB3858775A GB1524685A GB 1524685 A GB1524685 A GB 1524685A GB 38587/75 A GB38587/75 A GB 38587/75A GB 3858775 A GB3858775 A GB 3858775A GB 1524685 A GB1524685 A GB 1524685A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- layer
- deposited
- oxide
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000001444 catalytic combustion detection Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002068 genetic effect Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7412567,A NL184591C (nl) | 1974-09-24 | 1974-09-24 | Ladingsoverdrachtinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1524685A true GB1524685A (en) | 1978-09-13 |
Family
ID=19822150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38587/75A Expired GB1524685A (en) | 1974-09-24 | 1975-09-19 | Charge-transfer devices |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5158079A (nl) |
| AU (1) | AU497138B2 (nl) |
| CA (1) | CA1055159A (nl) |
| CH (1) | CH593561A5 (nl) |
| DE (1) | DE2541651C2 (nl) |
| FR (1) | FR2286506A1 (nl) |
| GB (1) | GB1524685A (nl) |
| IT (1) | IT1042721B (nl) |
| NL (1) | NL184591C (nl) |
| SE (1) | SE401578B (nl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0214702A1 (en) * | 1985-09-11 | 1987-03-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with mutually insulated strip-shaped silicon electrodes overlapping each other |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727494A (en) * | 1980-07-23 | 1982-02-13 | Sharp Corp | Magneto-optical storage element |
| JPS5760542A (en) * | 1980-09-29 | 1982-04-12 | Toshiba Corp | Information recording medium |
| JPS5766538A (en) * | 1980-10-08 | 1982-04-22 | Toshiba Corp | Information storage medium |
| JPS57169938A (en) * | 1981-04-10 | 1982-10-19 | Sony Corp | Optical type recording medium |
| JPS57172549A (en) * | 1981-04-17 | 1982-10-23 | C B S Sony Rekoode Kk | Optical recording medium |
| JPS5814342A (ja) * | 1981-07-16 | 1983-01-27 | Sharp Corp | 光記憶素子の製造方法 |
| JPS591136U (ja) * | 1982-06-25 | 1984-01-06 | 松下電器産業株式会社 | 光情報担体 |
| JPS5974534U (ja) * | 1982-11-10 | 1984-05-21 | パイオニア株式会社 | 光学式デイスク |
| JPS5999779U (ja) * | 1982-12-24 | 1984-07-05 | 共同印刷株式会社 | 光メモリ−媒体をもつｉｄカ−ド |
| JPS59177032U (ja) * | 1983-05-13 | 1984-11-27 | 日立コンデンサ株式会社 | レ−ザ−デイスク |
| FR2641416A1 (fr) * | 1988-12-30 | 1990-07-06 | Thomson Composants Militaires | Procede de fabrication d'un dispositif a transfert de charges |
| CA2150330A1 (en) * | 1994-05-27 | 1995-11-28 | Andre Willem Visagie | Shadow box or box frame unit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
| US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
| US4032952A (en) * | 1972-04-03 | 1977-06-28 | Hitachi, Ltd. | Bulk charge transfer semiconductor device |
| DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
| IT981505B (it) * | 1972-05-30 | 1974-10-10 | Ibm | Dispositivo a semiconduttori a cariche accoppiate perfezionato |
-
1974
- 1974-09-24 NL NLAANVRAGE7412567,A patent/NL184591C/nl not_active IP Right Cessation
-
1975
- 1975-09-18 DE DE2541651A patent/DE2541651C2/de not_active Expired
- 1975-09-19 IT IT27456/75A patent/IT1042721B/it active
- 1975-09-19 CH CH1217875A patent/CH593561A5/xx not_active IP Right Cessation
- 1975-09-19 GB GB38587/75A patent/GB1524685A/en not_active Expired
- 1975-09-19 CA CA235,924A patent/CA1055159A/en not_active Expired
- 1975-09-22 SE SE7510593A patent/SE401578B/xx unknown
- 1975-09-22 AU AU85037/75A patent/AU497138B2/en not_active Expired
- 1975-09-23 FR FR7529102A patent/FR2286506A1/fr active Granted
- 1975-09-23 JP JP50114407A patent/JPS5158079A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0214702A1 (en) * | 1985-09-11 | 1987-03-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with mutually insulated strip-shaped silicon electrodes overlapping each other |
Also Published As
| Publication number | Publication date |
|---|---|
| AU8503775A (en) | 1977-03-31 |
| NL7412567A (nl) | 1976-03-26 |
| FR2286506B1 (nl) | 1979-05-11 |
| JPS5528227B2 (nl) | 1980-07-26 |
| IT1042721B (it) | 1980-01-30 |
| NL184591B (nl) | 1989-04-03 |
| CA1055159A (en) | 1979-05-22 |
| DE2541651A1 (de) | 1976-04-08 |
| SE7510593L (sv) | 1976-03-25 |
| CH593561A5 (nl) | 1977-12-15 |
| AU497138B2 (en) | 1978-11-30 |
| FR2286506A1 (fr) | 1976-04-23 |
| DE2541651C2 (de) | 1983-10-06 |
| SE401578B (sv) | 1978-05-16 |
| JPS5158079A (en) | 1976-05-21 |
| NL184591C (nl) | 1989-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940919 |