GB1510683A - Method of adjusting the threshold voltage and saturation current of field effect transistors - Google Patents

Method of adjusting the threshold voltage and saturation current of field effect transistors

Info

Publication number
GB1510683A
GB1510683A GB31327/75A GB3132775A GB1510683A GB 1510683 A GB1510683 A GB 1510683A GB 31327/75 A GB31327/75 A GB 31327/75A GB 3132775 A GB3132775 A GB 3132775A GB 1510683 A GB1510683 A GB 1510683A
Authority
GB
United Kingdom
Prior art keywords
threshold voltage
test structure
jugfets
mask
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31327/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1510683A publication Critical patent/GB1510683A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB31327/75A 1974-07-26 1975-07-25 Method of adjusting the threshold voltage and saturation current of field effect transistors Expired GB1510683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426057A FR2280203A1 (fr) 1974-07-26 1974-07-26 Procede d'ajustement de tension de seuil de transistors a effet de champ

Publications (1)

Publication Number Publication Date
GB1510683A true GB1510683A (en) 1978-05-10

Family

ID=9141766

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31327/75A Expired GB1510683A (en) 1974-07-26 1975-07-25 Method of adjusting the threshold voltage and saturation current of field effect transistors

Country Status (5)

Country Link
US (1) US4013483A (https=)
JP (1) JPS5760783B2 (https=)
DE (1) DE2533460A1 (https=)
FR (1) FR2280203A1 (https=)
GB (1) GB1510683A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402761A (en) 1978-12-15 1983-09-06 Raytheon Company Method of making self-aligned gate MOS device having small channel lengths

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
JPS5513965A (en) * 1978-07-17 1980-01-31 Nec Corp Electric field control type semiconductor device
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS5617075A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Semiconductor device
JPS5793542A (en) * 1980-12-03 1982-06-10 Hitachi Ltd Semiconductor integrated circuit device
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
US4948746A (en) * 1988-03-04 1990-08-14 Harris Corporation Isolated gate MESFET and method of making and trimming
JP3911059B2 (ja) * 1997-01-31 2007-05-09 ソニー株式会社 半導体装置の製造方法
JP4084436B2 (ja) * 1997-03-26 2008-04-30 沖電気工業株式会社 化合物半導体装置の特性の制御方法
US6107106A (en) * 1998-02-05 2000-08-22 Sony Corporation Localized control of integrated circuit parameters using focus ion beam irradiation
US7466009B2 (en) * 2006-06-05 2008-12-16 Texas Instruments Incorporated Method for reducing dislocation threading using a suppression implant

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device
US3895966A (en) * 1969-09-30 1975-07-22 Sprague Electric Co Method of making insulated gate field effect transistor with controlled threshold voltage
US3666573A (en) * 1969-12-17 1972-05-30 Rca Corp Method for making transistors including gain determining step
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402761A (en) 1978-12-15 1983-09-06 Raytheon Company Method of making self-aligned gate MOS device having small channel lengths

Also Published As

Publication number Publication date
JPS5760783B2 (https=) 1982-12-21
US4013483A (en) 1977-03-22
FR2280203B1 (https=) 1978-03-31
DE2533460A1 (de) 1976-02-05
JPS5140775A (https=) 1976-04-05
FR2280203A1 (fr) 1976-02-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee