GB1492447A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1492447A
GB1492447A GB21385/75A GB2138575A GB1492447A GB 1492447 A GB1492447 A GB 1492447A GB 21385/75 A GB21385/75 A GB 21385/75A GB 2138575 A GB2138575 A GB 2138575A GB 1492447 A GB1492447 A GB 1492447A
Authority
GB
United Kingdom
Prior art keywords
zone
layer
photo
layers
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21385/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742435905 external-priority patent/DE2435905C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1492447A publication Critical patent/GB1492447A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
GB21385/75A 1974-07-25 1975-05-20 Semiconductor devices Expired GB1492447A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742435905 DE2435905C3 (de) 1974-07-25 Verfahren zum Herstellen einer Halbleiteranordnung

Publications (1)

Publication Number Publication Date
GB1492447A true GB1492447A (en) 1977-11-16

Family

ID=5921549

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21385/75A Expired GB1492447A (en) 1974-07-25 1975-05-20 Semiconductor devices

Country Status (6)

Country Link
US (1) US3963524A (enExample)
JP (1) JPS5140773A (enExample)
CA (1) CA1070028A (enExample)
FR (1) FR2280201A1 (enExample)
GB (1) GB1492447A (enExample)
IT (1) IT1039921B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117969A (en) * 1982-01-25 1983-10-19 Hitachi Ltd Method of fabricating semiconductor integrated circuit devices

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS6035818B2 (ja) * 1976-09-22 1985-08-16 日本電気株式会社 半導体装置の製造方法
US4135954A (en) * 1977-07-12 1979-01-23 International Business Machines Corporation Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
JPS6028135B2 (ja) * 1979-05-18 1985-07-03 富士通株式会社 半導体装置の製造方法
JPS58108737A (ja) * 1982-11-15 1983-06-28 Nec Corp 半導体装置の製造方法
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
GB1332931A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117969A (en) * 1982-01-25 1983-10-19 Hitachi Ltd Method of fabricating semiconductor integrated circuit devices
US4469535A (en) * 1982-01-25 1984-09-04 Hitachi, Ltd. Method of fabricating semiconductor integrated circuit devices

Also Published As

Publication number Publication date
CA1070028A (en) 1980-01-15
US3963524A (en) 1976-06-15
DE2435905A1 (de) 1976-02-05
JPS5140773A (en) 1976-04-05
FR2280201A1 (fr) 1976-02-20
FR2280201B1 (enExample) 1983-03-18
IT1039921B (it) 1979-12-10
DE2435905B2 (de) 1976-08-26

Similar Documents

Publication Publication Date Title
GB1464801A (en) Production of doped zones of one conductivity type in semi conductor bodies
ES8704553A1 (es) Procedimiento para dopar un cuerpo de silicio con boro.
GB1306817A (en) Semiconductor devices
US4279671A (en) Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition
GB1510276A (en) Production of bipolar integrated circuits
GB1332931A (en) Methods of manufacturing a semiconductor device
GB1492447A (en) Semiconductor devices
GB1522291A (en) Semiconductor device manufacture
GB1403012A (en) Epitaxial process for producing linear integrated power circuits
GB1340306A (en) Manufacture of semiconductor devices
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1296562A (enExample)
GB1327755A (en) Methods of manufacturing a semiconductor device
GB1358715A (en) Manufacture of semiconductor devices
GB1177320A (en) Improvements in or relating to the Production of Planar Semiconductor Components
GB1501896A (en) Semiconductor device
GB1294504A (en) Method of making a phosphorus glass passivated transistor
JPS57134956A (en) Manufacture of semiconductor integrated circuit
KR960015929B1 (ko) 바이폴라 트랜지스터의 매입층 제조방법
GB1328925A (en) Doping of silicon crystals
GB1099049A (en) A method of manufacturing transistors
JPS5654062A (en) Production of semiconductor device
GB1501894A (en) Method of manufacturing a power transistor
JPS6482668A (en) Manufacture of bipolar transistor
RU845678C (ru) Способ изготовлени ВЧ р- @ -р транзисторов

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee