GB1488940A - Production of monocrystals by the verneuil method - Google Patents
Production of monocrystals by the verneuil methodInfo
- Publication number
- GB1488940A GB1488940A GB9496/75A GB949675A GB1488940A GB 1488940 A GB1488940 A GB 1488940A GB 9496/75 A GB9496/75 A GB 9496/75A GB 949675 A GB949675 A GB 949675A GB 1488940 A GB1488940 A GB 1488940A
- Authority
- GB
- United Kingdom
- Prior art keywords
- deflection unit
- gas deflection
- verneiul
- march
- inserts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- XPYGGHVSFMUHLH-UUSULHAXSA-N falecalcitriol Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@@H](CCCC(O)(C(F)(F)F)C(F)(F)F)C)=C\C=C1\C[C@@H](O)C[C@H](O)C1=C XPYGGHVSFMUHLH-UUSULHAXSA-N 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742415110 DE2415110C2 (de) | 1974-03-28 | Vorrichtung zum Herstellen von Einkristallen nach Verneuil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1488940A true GB1488940A (en) | 1977-10-19 |
Family
ID=5911496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9496/75A Expired GB1488940A (en) | 1974-03-28 | 1975-03-07 | Production of monocrystals by the verneuil method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4000977A (enExample) |
| JP (1) | JPS50140380A (enExample) |
| CH (1) | CH590083A5 (enExample) |
| FR (1) | FR2265451B2 (enExample) |
| GB (1) | GB1488940A (enExample) |
| IT (1) | IT1049377B (enExample) |
| SE (1) | SE7503281L (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822449A (en) * | 1987-06-10 | 1989-04-18 | Massachusetts Institute Of Technology | Heat transfer control during crystal growth |
| US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
| US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
| US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
| US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
| KR102045890B1 (ko) | 2018-10-24 | 2019-12-04 | 비아로지스 주식회사 | 인조 보석 제조방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2792287A (en) * | 1956-04-04 | 1957-05-14 | Nat Lead Co | Synthetic rutile crystal and method for making same |
| US3012374A (en) * | 1957-10-15 | 1961-12-12 | Nat Lead Co | Method for growing crystals |
| US3282654A (en) * | 1964-05-18 | 1966-11-01 | Union Carbide Corp | Crystal growing furnace with an alumina liner |
| US3876382A (en) * | 1970-03-24 | 1975-04-08 | Siemens Ag | Verneuil apparatus for growing spinel-type oxide monocrystals |
-
1975
- 1975-03-07 GB GB9496/75A patent/GB1488940A/en not_active Expired
- 1975-03-10 CH CH296675A patent/CH590083A5/xx not_active IP Right Cessation
- 1975-03-21 SE SE7503281A patent/SE7503281L/xx unknown
- 1975-03-24 IT IT21547/75A patent/IT1049377B/it active
- 1975-03-25 FR FR7509266A patent/FR2265451B2/fr not_active Expired
- 1975-03-28 US US05/563,165 patent/US4000977A/en not_active Expired - Lifetime
- 1975-03-28 JP JP50041381A patent/JPS50140380A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2415110B1 (de) | 1975-05-22 |
| JPS50140380A (enExample) | 1975-11-11 |
| IT1049377B (it) | 1981-01-20 |
| USB563165I5 (enExample) | 1976-03-09 |
| SE7503281L (sv) | 1975-11-28 |
| US4000977A (en) | 1977-01-04 |
| FR2265451B2 (enExample) | 1978-07-28 |
| CH590083A5 (enExample) | 1977-07-29 |
| DE2415110A1 (enExample) | 1975-05-22 |
| FR2265451A2 (enExample) | 1975-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1412472A (en) | Process for the production of finely divided oxides | |
| JPS5430853A (en) | Production of soot form glass rod | |
| GB1068223A (en) | Crystal growing method and apparatus | |
| GB1488940A (en) | Production of monocrystals by the verneuil method | |
| GB1286024A (en) | Method of producing single semiconductor crystals | |
| US3870472A (en) | Method and apparatus for growing crystals by annealing the crystal after formation | |
| GB1222465A (en) | Improvements in or relating to apparatus for the drawing of monocrystalline semiconductor rods | |
| JPS5529155A (en) | Semiconductor device | |
| GB1216522A (en) | Zone-by-zone melting a rod | |
| GB809011A (en) | Synthetic unicrystalline bodies and methods for making same | |
| GB844542A (en) | Process and apparatus for growing crystalline boules | |
| GB1509013A (en) | Manufacture of monocrystalline gallium arsenide | |
| GB1075706A (en) | Production of dislocation-free single crystals of semiconductor material | |
| GB1227331A (enExample) | ||
| GB1365724A (en) | Methods of manufacturing single crystals of semiconductor mater ial | |
| GB1312884A (en) | Zone refining process | |
| JPS57149833A (en) | Manufacture of quartz glass product | |
| GB906485A (en) | Improvements in the production of mono-crystalline semiconductor material | |
| GB1339963A (en) | Manufacture of high-melting point oxide monocrystals | |
| GB875399A (en) | Electron beam furnace | |
| JPS56104738A (en) | Preparation of glass preform for light-piping | |
| GB1279382A (en) | Process for producing tubular boules | |
| GB1147770A (en) | Process for production of monocrystalline substances | |
| GB984700A (en) | Method of producing dendrite crystals | |
| JPS5295592A (en) | Hydrogen gas denature apparatus by down draft cupola having furnace body forming ridge line of throwwin materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |