GB1339963A - Manufacture of high-melting point oxide monocrystals - Google Patents
Manufacture of high-melting point oxide monocrystalsInfo
- Publication number
- GB1339963A GB1339963A GB2521671A GB2521671A GB1339963A GB 1339963 A GB1339963 A GB 1339963A GB 2521671 A GB2521671 A GB 2521671A GB 2521671 A GB2521671 A GB 2521671A GB 1339963 A GB1339963 A GB 1339963A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- temperature gradient
- axial temperature
- melting point
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1339963 Verneuil monocrystal process SIEMENS AG 19 April 1971 [24 March 1970 24 Nov 1970] 25216/71 Heading BIS Substrates of monocrystalline oxides or mixed oxides, which may be used for the epitaxial growth of Si, are prepared by operating the Verneuil process with a steep axial temperature gradient, in the region of the growing front, thus eliminating dislocations and leaving the crystal with a low residual stress, without annealing. As shown, a burning mixture of O 2 and H 2 are deflected immediately downstream of the growing tip 9, so that the flame does not envelope the crystal. If the growth furnace is not blocked off by ring 30, sleeve 14 of Al 2 O 3 is arranged to be a very close fit about crystal 10 (Figs. 1-6, not shown). A retractable bar 6 of sintered Al 2 O 3 supports the crystal 10 and a frame 23, which may be formed as a cooling coil to increase the axial temperature gradient, supports the gas deflector 112. The axial temperature gradient may be further increased by using parts of low thermal conductivity above the growing tip and parts of high thermal conductivity below it. The method is suitable for producing spinels, sapphires, rubies (for lasers), garnets and ferrites. It is stated that, by using a plasma burner, it is possible to produce monocrystals of high melting point metals, such as Nb.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702014203 DE2014203C3 (en) | 1970-03-24 | 1970-03-24 | Apparatus for the production of single crystals according to Verneuil |
| DE19702057782 DE2057782A1 (en) | 1970-11-24 | 1970-11-24 | High melting oxide single crystals mfe freef - |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1339963A true GB1339963A (en) | 1973-12-05 |
Family
ID=25758879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2521671A Expired GB1339963A (en) | 1970-03-24 | 1971-04-19 | Manufacture of high-melting point oxide monocrystals |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT333241B (en) |
| CA (1) | CA942638A (en) |
| CH (1) | CH571361A5 (en) |
| FR (1) | FR2084999A5 (en) |
| GB (1) | GB1339963A (en) |
| NL (1) | NL7103970A (en) |
| SE (1) | SE378070B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007016489A1 (en) * | 2005-08-02 | 2007-02-08 | Radion Mogilevsky | Method for purifying and producing dense blocks |
-
1971
- 1971-03-12 CH CH367071A patent/CH571361A5/xx not_active IP Right Cessation
- 1971-03-23 FR FR7110086A patent/FR2084999A5/fr not_active Expired
- 1971-03-23 SE SE375371A patent/SE378070B/xx unknown
- 1971-03-23 AT AT249671A patent/AT333241B/en not_active IP Right Cessation
- 1971-03-24 NL NL7103970A patent/NL7103970A/xx unknown
- 1971-03-24 CA CA108,562A patent/CA942638A/en not_active Expired
- 1971-04-19 GB GB2521671A patent/GB1339963A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007016489A1 (en) * | 2005-08-02 | 2007-02-08 | Radion Mogilevsky | Method for purifying and producing dense blocks |
Also Published As
| Publication number | Publication date |
|---|---|
| SE378070B (en) | 1975-08-18 |
| CA942638A (en) | 1974-02-26 |
| ATA249671A (en) | 1976-03-15 |
| FR2084999A5 (en) | 1971-12-17 |
| CH571361A5 (en) | 1976-01-15 |
| AT333241B (en) | 1976-11-10 |
| NL7103970A (en) | 1971-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |