GB1466007A - Data storage apparatus employing variable threshold field effect semiconductor devices - Google Patents
Data storage apparatus employing variable threshold field effect semiconductor devicesInfo
- Publication number
- GB1466007A GB1466007A GB2376274A GB2376274A GB1466007A GB 1466007 A GB1466007 A GB 1466007A GB 2376274 A GB2376274 A GB 2376274A GB 2376274 A GB2376274 A GB 2376274A GB 1466007 A GB1466007 A GB 1466007A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate
- storage
- strips
- source
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000013500 data storage Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 210000000352 storage cell Anatomy 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37522273A | 1973-06-29 | 1973-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1466007A true GB1466007A (en) | 1977-03-02 |
Family
ID=23480012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2376274A Expired GB1466007A (en) | 1973-06-29 | 1974-05-29 | Data storage apparatus employing variable threshold field effect semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5024038A (enrdf_load_stackoverflow) |
| FR (1) | FR2235454B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1466007A (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1110947B (it) * | 1978-01-19 | 1986-01-13 | Sperry Rand Corp | Elemento di memoria ad accesso comandato |
| JPS54136224A (en) * | 1978-04-14 | 1979-10-23 | Matsushita Electronics Corp | Target electrode for color pick up tube and its manufacture |
| JPS5512688A (en) * | 1978-07-14 | 1980-01-29 | Matsushita Electronics Corp | Target electrode for color camera |
| JPS5584976A (en) * | 1978-12-22 | 1980-06-26 | Nippon Telegraph & Telephone | Surface treatment of transparent electrode layer |
| JPS55138278A (en) * | 1979-04-11 | 1980-10-28 | Hitachi Ltd | Semiconducor non-volatile memory |
| JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
| JPS5641640A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
| JPS5641644A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
| JPS5654702A (en) * | 1979-10-11 | 1981-05-14 | Hitachi Ltd | Method of manufactuping transparent conductive film |
| DE3138947A1 (de) * | 1981-09-30 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Speicherzelle mit einem doppel-gate feldeffekttransistor und verfahren zu ihrem betrieb |
| JPH063762B2 (ja) * | 1985-10-30 | 1994-01-12 | ロ−ム株式会社 | 酸化金属皮膜抵抗器の製造方法 |
-
1974
- 1974-05-17 JP JP5462174A patent/JPS5024038A/ja active Pending
- 1974-05-21 FR FR7418491A patent/FR2235454B1/fr not_active Expired
- 1974-05-29 GB GB2376274A patent/GB1466007A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5024038A (enrdf_load_stackoverflow) | 1975-03-14 |
| FR2235454B1 (enrdf_load_stackoverflow) | 1977-09-30 |
| FR2235454A1 (enrdf_load_stackoverflow) | 1975-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |