GB1452884A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1452884A
GB1452884A GB691775A GB691775A GB1452884A GB 1452884 A GB1452884 A GB 1452884A GB 691775 A GB691775 A GB 691775A GB 691775 A GB691775 A GB 691775A GB 1452884 A GB1452884 A GB 1452884A
Authority
GB
United Kingdom
Prior art keywords
layer
isolation regions
circuit device
forming
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB691775A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1452884A publication Critical patent/GB1452884A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6927—
    • H10P14/61—
    • H10P14/6309—
    • H10P14/69215—
    • H10W10/012—
    • H10W10/13—
    • H10W74/40—
    • H10P14/6329—
    • H10P14/6334—
    • H10P14/6681—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/261—In terms of molecular thickness or light wave length

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
GB691775A 1974-03-13 1975-02-19 Semiconductor devices Expired GB1452884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US450631A US3874919A (en) 1974-03-13 1974-03-13 Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body

Publications (1)

Publication Number Publication Date
GB1452884A true GB1452884A (en) 1976-10-20

Family

ID=23788879

Family Applications (1)

Application Number Title Priority Date Filing Date
GB691775A Expired GB1452884A (en) 1974-03-13 1975-02-19 Semiconductor devices

Country Status (7)

Country Link
US (1) US3874919A (enExample)
JP (1) JPS5339312B2 (enExample)
CA (1) CA1028069A (enExample)
DE (1) DE2509174A1 (enExample)
FR (1) FR2264393B1 (enExample)
GB (1) GB1452884A (enExample)
IT (1) IT1031235B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
JPS5587444A (en) 1978-12-26 1980-07-02 Fujitsu Ltd Method of forming insulating film on semiconductor surface
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS5762545A (en) * 1980-10-03 1982-04-15 Fujitsu Ltd Manufacture of semiconductor device
JPS5821842A (ja) * 1981-07-30 1983-02-08 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 分離領域の形成方法
EP0075875A3 (en) * 1981-09-28 1986-07-02 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS59188128A (ja) * 1983-04-06 1984-10-25 Ise Electronics Corp 窒化シリコン膜の形成方法
NL8603111A (nl) * 1986-12-08 1988-07-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak aan zijn oppervlak wordt voorzien van veldoxidegebieden.
US5260096A (en) * 1987-06-11 1993-11-09 Air Products And Chemicals, Inc. Structral articles
US5629531A (en) * 1992-06-05 1997-05-13 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
US6022799A (en) * 1995-06-07 2000-02-08 Advanced Micro Devices, Inc. Methods for making a semiconductor device with improved hot carrier lifetime
US5710067A (en) * 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
JP3412037B2 (ja) * 1996-03-12 2003-06-03 株式会社デンソー 微細加工方法
JP3047822B2 (ja) * 1996-08-29 2000-06-05 日本電気株式会社 半導体装置の製造方法
US6090686A (en) * 1997-06-18 2000-07-18 Lucent Technologies, Inc. Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US6946352B2 (en) * 2003-07-24 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor device and method
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
TW201017888A (en) * 2008-10-22 2010-05-01 Au Optronics Corp Bottom-gate thin-film transistor and method for fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765935A (en) * 1971-08-10 1973-10-16 Bell Telephone Labor Inc Radiation resistant coatings for semiconductor devices
JPS5432509B2 (enExample) * 1972-06-02 1979-10-15

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
US4717631A (en) * 1986-01-16 1988-01-05 Rca Corporation Silicon oxynitride passivated semiconductor body and method of making same
GB2185626B (en) * 1986-01-16 1990-03-28 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same

Also Published As

Publication number Publication date
JPS5339312B2 (enExample) 1978-10-20
CA1028069A (en) 1978-03-14
US3874919A (en) 1975-04-01
IT1031235B (it) 1979-04-30
FR2264393A1 (enExample) 1975-10-10
FR2264393B1 (enExample) 1982-06-04
DE2509174A1 (de) 1975-09-25
JPS50123275A (enExample) 1975-09-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930219