GB1443718A - Control of -blooming- in charge-coupled image sensing arrays - Google Patents

Control of -blooming- in charge-coupled image sensing arrays

Info

Publication number
GB1443718A
GB1443718A GB4174973A GB4174973A GB1443718A GB 1443718 A GB1443718 A GB 1443718A GB 4174973 A GB4174973 A GB 4174973A GB 4174973 A GB4174973 A GB 4174973A GB 1443718 A GB1443718 A GB 1443718A
Authority
GB
United Kingdom
Prior art keywords
charge
electrodes
drain
transfer
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4174973A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1443718A publication Critical patent/GB1443718A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
GB4174973A 1972-09-11 1973-09-05 Control of -blooming- in charge-coupled image sensing arrays Expired GB1443718A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28786072A 1972-09-11 1972-09-11

Publications (1)

Publication Number Publication Date
GB1443718A true GB1443718A (en) 1976-07-21

Family

ID=23104672

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4174973A Expired GB1443718A (en) 1972-09-11 1973-09-05 Control of -blooming- in charge-coupled image sensing arrays

Country Status (5)

Country Link
JP (1) JPS5122356B2 (fr)
DE (1) DE2345784C3 (fr)
FR (1) FR2199200B1 (fr)
GB (1) GB1443718A (fr)
NL (1) NL7312152A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577115A (en) * 1982-11-08 1986-03-18 Rca Corporation Apparatus for sensing transient phenomena in radiant energy images
WO2005098957A1 (fr) * 2004-04-07 2005-10-20 E2V Technologies (Uk) Limited Registre multiplicateur pour amplification de la charge de signal

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1522487A (en) * 1974-08-29 1978-08-23 Sony Corp Solid state colour television cameras
JPS51131279A (en) * 1975-05-08 1976-11-15 Matsushita Electric Ind Co Ltd Electric charge combination element
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device
JPS5915498B2 (ja) * 1975-08-09 1984-04-10 松下電器産業株式会社 半導体装置の製造方法
JPS5412582A (en) * 1977-06-29 1979-01-30 Hitachi Ltd Semiconductor device
JPS5429519A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Semiconductor pick up device
US4173064A (en) * 1977-08-22 1979-11-06 Texas Instruments Incorporated Split gate electrode, self-aligned antiblooming structure and method of making same
US4251571A (en) * 1978-05-02 1981-02-17 International Business Machines Corporation Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon
JPS559532U (fr) * 1978-06-30 1980-01-22
DE3028117C2 (de) * 1979-07-25 1984-05-10 Rca Corp., New York, N.Y. Verfahren zum Herstellen von Bildaufnahmevorrichtungen mit dünnem Substrat und Verwendung dieses Verfahrens
JPS5632776A (en) * 1979-08-23 1981-04-02 Sanyo Electric Co Ltd Ccd image sensor
JPS60246673A (ja) * 1984-05-22 1985-12-06 Nec Corp 固体撮像素子
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577115A (en) * 1982-11-08 1986-03-18 Rca Corporation Apparatus for sensing transient phenomena in radiant energy images
WO2005098957A1 (fr) * 2004-04-07 2005-10-20 E2V Technologies (Uk) Limited Registre multiplicateur pour amplification de la charge de signal

Also Published As

Publication number Publication date
DE2345784A1 (de) 1974-03-21
JPS4966082A (fr) 1974-06-26
NL7312152A (fr) 1974-03-13
DE2345784C3 (de) 1979-05-23
FR2199200A1 (fr) 1974-04-05
JPS5122356B2 (fr) 1976-07-09
DE2345784B2 (de) 1976-12-16
FR2199200B1 (fr) 1977-09-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19920905