NL7312152A - - Google Patents
Info
- Publication number
- NL7312152A NL7312152A NL7312152A NL7312152A NL7312152A NL 7312152 A NL7312152 A NL 7312152A NL 7312152 A NL7312152 A NL 7312152A NL 7312152 A NL7312152 A NL 7312152A NL 7312152 A NL7312152 A NL 7312152A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28786072A | 1972-09-11 | 1972-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7312152A true NL7312152A (fr) | 1974-03-13 |
Family
ID=23104672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7312152A NL7312152A (fr) | 1972-09-11 | 1973-09-04 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5122356B2 (fr) |
| DE (1) | DE2345784C3 (fr) |
| FR (1) | FR2199200B1 (fr) |
| GB (1) | GB1443718A (fr) |
| NL (1) | NL7312152A (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1522487A (en) * | 1974-08-29 | 1978-08-23 | Sony Corp | Solid state colour television cameras |
| JPS51131279A (en) * | 1975-05-08 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Electric charge combination element |
| JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
| JPS5915498B2 (ja) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS5412582A (en) * | 1977-06-29 | 1979-01-30 | Hitachi Ltd | Semiconductor device |
| JPS5429519A (en) * | 1977-08-09 | 1979-03-05 | Fujitsu Ltd | Semiconductor pick up device |
| US4173064A (en) * | 1977-08-22 | 1979-11-06 | Texas Instruments Incorporated | Split gate electrode, self-aligned antiblooming structure and method of making same |
| US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
| JPS559532U (fr) * | 1978-06-30 | 1980-01-22 | ||
| DE3028117C2 (de) * | 1979-07-25 | 1984-05-10 | Rca Corp., New York, N.Y. | Verfahren zum Herstellen von Bildaufnahmevorrichtungen mit dünnem Substrat und Verwendung dieses Verfahrens |
| JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
| US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
| JPS60246673A (ja) * | 1984-05-22 | 1985-12-06 | Nec Corp | 固体撮像素子 |
| JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
| GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
-
1973
- 1973-09-04 NL NL7312152A patent/NL7312152A/xx unknown
- 1973-09-05 GB GB4174973A patent/GB1443718A/en not_active Expired
- 1973-09-11 FR FR7332675A patent/FR2199200B1/fr not_active Expired
- 1973-09-11 DE DE19732345784 patent/DE2345784C3/de not_active Expired
- 1973-09-11 JP JP48102578A patent/JPS5122356B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1443718A (en) | 1976-07-21 |
| DE2345784A1 (de) | 1974-03-21 |
| JPS4966082A (fr) | 1974-06-26 |
| DE2345784C3 (de) | 1979-05-23 |
| FR2199200A1 (fr) | 1974-04-05 |
| JPS5122356B2 (fr) | 1976-07-09 |
| DE2345784B2 (de) | 1976-12-16 |
| FR2199200B1 (fr) | 1977-09-23 |