GB1423037A - Silicon carbide - Google Patents
Silicon carbideInfo
- Publication number
- GB1423037A GB1423037A GB510373A GB510373A GB1423037A GB 1423037 A GB1423037 A GB 1423037A GB 510373 A GB510373 A GB 510373A GB 510373 A GB510373 A GB 510373A GB 1423037 A GB1423037 A GB 1423037A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- layer
- feb
- seeding
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 238000010899 nucleation Methods 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000370 acceptor Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 229910018507 Al—Ni Inorganic materials 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910004337 Ti-Ni Inorganic materials 0.000 abstract 1
- 229910011209 Ti—Ni Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 abstract 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
- H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1742653A SU430797A1 (ru) | 1972-02-08 | 1972-02-08 | Способ создани диодного источника света на карбиде кремни |
SU1795129 | 1972-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1423037A true GB1423037A (en) | 1976-01-28 |
Family
ID=26665454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB510373A Expired GB1423037A (en) | 1972-02-08 | 1973-02-01 | Silicon carbide |
Country Status (5)
Country | Link |
---|---|
CA (1) | CA996845A (enrdf_load_stackoverflow) |
DD (2) | DD108213A1 (enrdf_load_stackoverflow) |
FR (1) | FR2171184B1 (enrdf_load_stackoverflow) |
GB (1) | GB1423037A (enrdf_load_stackoverflow) |
IT (1) | IT977246B (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2150126A (en) * | 1983-11-23 | 1985-06-26 | Advanced Semiconductor Mat | Stable conductive/elements for direct exposure to reactive environments |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107974712A (zh) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | 一种半绝缘碳化硅单晶的制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1268952A (fr) * | 1959-10-08 | 1961-08-04 | Wacker Chemie Gmbh | Procédé de fabrication de carbures, nitrures et borures cristallins de grande pureté |
DE1802350C3 (de) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Elektrolumineszente Halbleiterdiode |
-
1973
- 1973-02-01 GB GB510373A patent/GB1423037A/en not_active Expired
- 1973-02-06 DD DD168732A patent/DD108213A1/xx unknown
- 1973-02-06 CA CA163,038A patent/CA996845A/en not_active Expired
- 1973-02-06 DD DD178909*A patent/DD116733A1/xx unknown
- 1973-02-06 FR FR7304133A patent/FR2171184B1/fr not_active Expired
- 1973-02-07 IT IT48117/73A patent/IT977246B/it active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2150126A (en) * | 1983-11-23 | 1985-06-26 | Advanced Semiconductor Mat | Stable conductive/elements for direct exposure to reactive environments |
Also Published As
Publication number | Publication date |
---|---|
DE2305544A1 (de) | 1973-10-11 |
IT977246B (it) | 1974-09-10 |
DE2305544B2 (de) | 1975-09-18 |
FR2171184B1 (enrdf_load_stackoverflow) | 1979-05-04 |
DD116733A1 (enrdf_load_stackoverflow) | 1975-12-05 |
FR2171184A1 (enrdf_load_stackoverflow) | 1973-09-21 |
CA996845A (en) | 1976-09-14 |
DD108213A1 (enrdf_load_stackoverflow) | 1974-09-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |