GB1422033A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
GB1422033A
GB1422033A GB4567673A GB4567673A GB1422033A GB 1422033 A GB1422033 A GB 1422033A GB 4567673 A GB4567673 A GB 4567673A GB 4567673 A GB4567673 A GB 4567673A GB 1422033 A GB1422033 A GB 1422033A
Authority
GB
United Kingdom
Prior art keywords
layer
insulating layer
thick
conductive material
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4567673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of GB1422033A publication Critical patent/GB1422033A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
GB4567673A 1972-10-12 1973-10-01 Method of manufacturing a semiconductor device Expired GB1422033A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00296920A US3833919A (en) 1972-10-12 1972-10-12 Multilevel conductor structure and method

Publications (1)

Publication Number Publication Date
GB1422033A true GB1422033A (en) 1976-01-21

Family

ID=23144103

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4567673A Expired GB1422033A (en) 1972-10-12 1973-10-01 Method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US3833919A (https=)
JP (1) JPS4974890A (https=)
CA (1) CA979539A (https=)
DE (1) DE2351437B2 (https=)
FR (1) FR2203171B1 (https=)
GB (1) GB1422033A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937993A1 (de) * 1979-09-20 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001872A (en) * 1973-09-28 1977-01-04 Rca Corporation High-reliability plastic-packaged semiconductor device
JPS5131863A (en) * 1974-09-11 1976-03-18 Matsushita Electric Industrial Co Ltd Konseiatsumakushusekikaironoseizoho
DE2445594A1 (de) * 1974-09-24 1976-04-08 Siemens Ag Verfahren zur herstellung integrierter schaltungen
US4185294A (en) * 1975-12-10 1980-01-22 Tokyo Shibaura Electric Co., Ltd. Semiconductor device and a method for manufacturing the same
US4275409A (en) * 1977-02-28 1981-06-23 International Business Machines Corporation Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US4319260A (en) * 1979-09-05 1982-03-09 Texas Instruments Incorporated Multilevel interconnect system for high density silicon gate field effect transistors
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
US4420503A (en) * 1982-05-17 1983-12-13 Rca Corporation Low temperature elevated pressure glass flow/re-flow process
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPS60167357A (ja) * 1984-12-24 1985-08-30 Toshiba Corp 半導体装置の製造方法
JPH0666452B2 (ja) * 1987-09-04 1994-08-24 株式会社東芝 固体撮像装置の製造方法
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
DE69417211T2 (de) * 1994-04-12 1999-07-08 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Planariezierungsverfahren für die Herstellung von integrierten Schaltkreisen, insbesondere für nichtflüssige Halbleiterspeicheranordnungen
US6800899B2 (en) * 2001-08-30 2004-10-05 Micron Technology, Inc. Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546013A (en) * 1961-09-29 1970-12-08 Ibm Method of providing protective coverings for semiconductors
US3497407A (en) * 1966-12-28 1970-02-24 Ibm Etching of semiconductor coatings of sio2
US3434020A (en) * 1966-12-30 1969-03-18 Texas Instruments Inc Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold
US3632433A (en) * 1967-03-29 1972-01-04 Hitachi Ltd Method for producing a semiconductor device
US3584264A (en) * 1968-03-21 1971-06-08 Westinghouse Electric Corp Encapsulated microcircuit device
US3566457A (en) * 1968-05-01 1971-03-02 Gen Electric Buried metallic film devices and method of making the same
US3575743A (en) * 1969-06-05 1971-04-20 Rca Corp Method of making a phosphorus glass passivated transistor
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
DE2937993A1 (de) * 1979-09-20 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie

Also Published As

Publication number Publication date
US3833919A (en) 1974-09-03
FR2203171A1 (https=) 1974-05-10
DE2351437A1 (de) 1974-04-25
CA979539A (en) 1975-12-09
JPS4974890A (https=) 1974-07-19
FR2203171B1 (https=) 1978-06-30
DE2351437B2 (de) 1978-04-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee