GB1414143A - Method of manufacturing silicon nitride powder - Google Patents

Method of manufacturing silicon nitride powder

Info

Publication number
GB1414143A
GB1414143A GB1001072A GB1001072A GB1414143A GB 1414143 A GB1414143 A GB 1414143A GB 1001072 A GB1001072 A GB 1001072A GB 1001072 A GB1001072 A GB 1001072A GB 1414143 A GB1414143 A GB 1414143A
Authority
GB
United Kingdom
Prior art keywords
furnace
temp
gas
powder
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1001072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to GB1001072A priority Critical patent/GB1414143A/en
Priority to CA165,015A priority patent/CA990934A/en
Priority to JP2482073A priority patent/JPS48102100A/ja
Publication of GB1414143A publication Critical patent/GB1414143A/en
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
    • F01D—NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAM TURBINES
    • F01D11/00—Preventing or minimising internal leakage of working-fluid, e.g. between stages
    • F01D11/001—Preventing or minimising internal leakage of working-fluid, e.g. between stages for sealing space between stator blade and rotor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0682—Preparation by direct nitridation of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Products (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)

Abstract

1414143 Silicon nitride LUCAS INDUSTRIES Ltd 19 Feb 1973 [3 March 1972] 10010/72 Heading C1A α-Phase Si 3 N 4 is prepared by heating a bed of Si powder in a flow of reactable N-containing gas passing through a furnace wherein the partial pressure of the gas in the furnace is controlled by adjusting the input and output flows thereby preventing the temp. of the Si powder exceeding a value above which #-phase Si 3 N 4 is formed (e.g. 1150‹ C.), said control being achieved by either (a) diluting the gas in the furnace eg with Ar, or (b) evacuating the furnace. The supply of heat may also be regulated to maintain the required temp. The Si powder may have a particle size of < 8Á and the bed may initially contain 5-25% by wt. α-Si 3 N 4 of particle size 10 Á, the mixture having a top density of 0À65 g./cc. The temp. of the furnace may be raised at 400‹ C./hour to 1150‹ C. and then the nitriding, preferably with a mixture of 90% N 2 and 10% H 2 , started and carried on until the input and output flows of undiluted N 2 gas are equal. The temp. of the furnace may then be raised to 1350‹ C. to complete the reaction.
GB1001072A 1972-03-03 1972-03-03 Method of manufacturing silicon nitride powder Expired GB1414143A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB1001072A GB1414143A (en) 1972-03-03 1972-03-03 Method of manufacturing silicon nitride powder
CA165,015A CA990934A (en) 1972-03-03 1973-03-01 Method of manufacturing silicon nitride powder
JP2482073A JPS48102100A (en) 1972-03-03 1973-03-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1001072A GB1414143A (en) 1972-03-03 1972-03-03 Method of manufacturing silicon nitride powder

Publications (1)

Publication Number Publication Date
GB1414143A true GB1414143A (en) 1975-11-19

Family

ID=9959739

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1001072A Expired GB1414143A (en) 1972-03-03 1972-03-03 Method of manufacturing silicon nitride powder

Country Status (3)

Country Link
JP (1) JPS48102100A (en)
CA (1) CA990934A (en)
GB (1) GB1414143A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525335A (en) * 1982-04-01 1985-06-25 Tateho Kagaku Kogyo Kabushiki Kaisha Method of manufacturing crystalline silicon nitride and method of separation thereof
EP0186497A2 (en) * 1984-12-28 1986-07-02 Onoda Cement Company, Ltd. Process for producing silicon nitride of high alpha content
EP0442032A1 (en) * 1990-02-14 1991-08-21 Norton Company Process for preparing silicon nitride

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183604A (en) * 1984-09-29 1986-04-28 Denki Kagaku Kogyo Kk Production of metal nitride
JPS63147807A (en) * 1986-12-11 1988-06-20 Shin Etsu Chem Co Ltd Production of silicon nitride having high content of alpha form

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525335A (en) * 1982-04-01 1985-06-25 Tateho Kagaku Kogyo Kabushiki Kaisha Method of manufacturing crystalline silicon nitride and method of separation thereof
EP0186497A2 (en) * 1984-12-28 1986-07-02 Onoda Cement Company, Ltd. Process for producing silicon nitride of high alpha content
EP0186497A3 (en) * 1984-12-28 1987-09-09 Onoda Cement Company, Ltd. Process for producing silicon nitride of high alpha content
EP0442032A1 (en) * 1990-02-14 1991-08-21 Norton Company Process for preparing silicon nitride

Also Published As

Publication number Publication date
CA990934A (en) 1976-06-15
JPS48102100A (en) 1973-12-21

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930217