GB1413900A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1413900A
GB1413900A GB5958973A GB5958973A GB1413900A GB 1413900 A GB1413900 A GB 1413900A GB 5958973 A GB5958973 A GB 5958973A GB 5958973 A GB5958973 A GB 5958973A GB 1413900 A GB1413900 A GB 1413900A
Authority
GB
United Kingdom
Prior art keywords
fets
zones
semi
conductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5958973A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1413900A publication Critical patent/GB1413900A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
GB5958973A 1973-01-26 1973-12-21 Integrated circuits Expired GB1413900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
GB1413900A true GB1413900A (en) 1975-11-12

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5958973A Expired GB1413900A (en) 1973-01-26 1973-12-21 Integrated circuits

Country Status (12)

Country Link
JP (1) JPS49110281A (da)
AT (1) AT339375B (da)
BE (1) BE810156A (da)
CA (1) CA1013482A (da)
CH (1) CH564850A5 (da)
DE (1) DE2303916A1 (da)
FR (1) FR2215704B1 (da)
GB (1) GB1413900A (da)
IT (1) IT1007011B (da)
LU (1) LU69236A1 (da)
NL (1) NL7400934A (da)
SE (1) SE385752B (da)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022266A1 (en) * 1979-07-10 1981-01-14 Kabushiki Kaisha Toshiba Semiconductor circuit device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (da) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022266A1 (en) * 1979-07-10 1981-01-14 Kabushiki Kaisha Toshiba Semiconductor circuit device

Also Published As

Publication number Publication date
DE2303916A1 (de) 1974-08-01
LU69236A1 (da) 1974-04-10
ATA1051373A (de) 1977-02-15
BE810156A (fr) 1974-05-16
IT1007011B (it) 1976-10-30
SE385752B (sv) 1976-07-19
JPS49110281A (da) 1974-10-21
FR2215704B1 (da) 1977-08-26
NL7400934A (da) 1974-07-30
AT339375B (de) 1977-10-10
CH564850A5 (da) 1975-07-31
FR2215704A1 (da) 1974-08-23
CA1013482A (en) 1977-07-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee