CA1013482A - Integrated circuit employing at least two field effect transistors - Google Patents

Integrated circuit employing at least two field effect transistors

Info

Publication number
CA1013482A
CA1013482A CA190,793A CA190793A CA1013482A CA 1013482 A CA1013482 A CA 1013482A CA 190793 A CA190793 A CA 190793A CA 1013482 A CA1013482 A CA 1013482A
Authority
CA
Canada
Prior art keywords
integrated circuit
field effect
effect transistors
circuit employing
employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA190,793A
Other languages
English (en)
Inventor
Heinrich Schlotterer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1013482A publication Critical patent/CA1013482A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CA190,793A 1973-01-26 1974-01-23 Integrated circuit employing at least two field effect transistors Expired CA1013482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
CA1013482A true CA1013482A (en) 1977-07-05

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
CA190,793A Expired CA1013482A (en) 1973-01-26 1974-01-23 Integrated circuit employing at least two field effect transistors

Country Status (12)

Country Link
JP (1) JPS49110281A (da)
AT (1) AT339375B (da)
BE (1) BE810156A (da)
CA (1) CA1013482A (da)
CH (1) CH564850A5 (da)
DE (1) DE2303916A1 (da)
FR (1) FR2215704B1 (da)
GB (1) GB1413900A (da)
IT (1) IT1007011B (da)
LU (1) LU69236A1 (da)
NL (1) NL7400934A (da)
SE (1) SE385752B (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (da) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
CH564850A5 (da) 1975-07-31
ATA1051373A (de) 1977-02-15
FR2215704A1 (da) 1974-08-23
IT1007011B (it) 1976-10-30
GB1413900A (en) 1975-11-12
DE2303916A1 (de) 1974-08-01
AT339375B (de) 1977-10-10
JPS49110281A (da) 1974-10-21
BE810156A (fr) 1974-05-16
FR2215704B1 (da) 1977-08-26
LU69236A1 (da) 1974-04-10
NL7400934A (da) 1974-07-30
SE385752B (sv) 1976-07-19

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