GB1411830A - Method of making a metal silicide-silicon schottky barrier - Google Patents
Method of making a metal silicide-silicon schottky barrierInfo
- Publication number
- GB1411830A GB1411830A GB5609873A GB5609873A GB1411830A GB 1411830 A GB1411830 A GB 1411830A GB 5609873 A GB5609873 A GB 5609873A GB 5609873 A GB5609873 A GB 5609873A GB 1411830 A GB1411830 A GB 1411830A
- Authority
- GB
- United Kingdom
- Prior art keywords
- making
- metal silicide
- schottky barrier
- silicon schottky
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- 229910052741 iridium Inorganic materials 0.000 abstract 2
- 229910052762 osmium Inorganic materials 0.000 abstract 2
- 229910052697 platinum Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00314002A US3841904A (en) | 1972-12-11 | 1972-12-11 | Method of making a metal silicide-silicon schottky barrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1411830A true GB1411830A (en) | 1975-10-29 |
Family
ID=23218106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5609873A Expired GB1411830A (en) | 1972-12-11 | 1973-12-04 | Method of making a metal silicide-silicon schottky barrier |
Country Status (6)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4110488A (en) * | 1976-04-09 | 1978-08-29 | Rca Corporation | Method for making schottky barrier diodes |
| US4052253A (en) * | 1976-09-27 | 1977-10-04 | Motorola, Inc. | Semiconductor-oxide etchant |
| DE2658124C3 (de) * | 1976-12-22 | 1982-05-06 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Elektroschmelzkorund |
| US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
| US4675713A (en) * | 1982-05-10 | 1987-06-23 | Motorola, Inc. | MOS transistor |
| US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
| US4687537A (en) * | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
| US4914042A (en) * | 1986-09-30 | 1990-04-03 | Colorado State University Research Foundation | Forming a transition metal silicide radiation detector and source |
| US5804034A (en) * | 1994-03-21 | 1998-09-08 | Texas Instruments Incorporated | Method for manufacturing semiconductor device |
| US7002197B2 (en) * | 2004-01-23 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Cross point resistive memory array |
| CA2702851A1 (en) * | 2007-09-10 | 2009-03-19 | University Of Florida Research Foundation, Inc. | Nanotube enabled, gate-voltage controlled light emitting diodes |
| WO2014071343A1 (en) | 2012-11-05 | 2014-05-08 | University Of Florida Research Foundation, Inc. | Brightness compensation in a display |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3397450A (en) * | 1964-01-31 | 1968-08-20 | Fairchild Camera Instr Co | Method of forming a metal rectifying contact to semiconductor material by displacement plating |
| FR1481605A (fr) * | 1965-06-02 | 1967-05-19 | Texas Instruments Inc | Procédé de fabrication de contacts ohmiques sur des composants semi-conducteurs |
| US3519479A (en) * | 1965-12-16 | 1970-07-07 | Matsushita Electronics Corp | Method of manufacturing semiconductor device |
| US3476984A (en) * | 1966-11-10 | 1969-11-04 | Solitron Devices | Schottky barrier semiconductor device |
| JPS4826188B1 (US06605200-20030812-C00035.png) * | 1968-10-04 | 1973-08-07 | ||
| US3642526A (en) * | 1969-03-06 | 1972-02-15 | Hitachi Ltd | Semiconductor surface barrier diode of schottky type and method of making same |
| US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
| US3742317A (en) * | 1970-09-02 | 1973-06-26 | Instr Inc | Schottky barrier diode |
-
1972
- 1972-12-11 US US00314002A patent/US3841904A/en not_active Expired - Lifetime
-
1973
- 1973-11-23 CA CA186,609A patent/CA990415A/en not_active Expired
- 1973-12-01 DE DE2360030A patent/DE2360030C3/de not_active Expired
- 1973-12-04 GB GB5609873A patent/GB1411830A/en not_active Expired
- 1973-12-06 JP JP48138565A patent/JPS4997000A/ja active Pending
- 1973-12-10 FR FR7344031A patent/FR2210014B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2360030B2 (de) | 1978-08-03 |
| JPS4997000A (US06605200-20030812-C00035.png) | 1974-09-13 |
| FR2210014B1 (US06605200-20030812-C00035.png) | 1978-11-10 |
| FR2210014A1 (US06605200-20030812-C00035.png) | 1974-07-05 |
| US3841904A (en) | 1974-10-15 |
| CA990415A (en) | 1976-06-01 |
| DE2360030A1 (de) | 1974-06-20 |
| DE2360030C3 (de) | 1979-04-05 |
Similar Documents
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |