GB1410728A - Etching methods to their application and to devices produced thereby - Google Patents

Etching methods to their application and to devices produced thereby

Info

Publication number
GB1410728A
GB1410728A GB5435573A GB5435573A GB1410728A GB 1410728 A GB1410728 A GB 1410728A GB 5435573 A GB5435573 A GB 5435573A GB 5435573 A GB5435573 A GB 5435573A GB 1410728 A GB1410728 A GB 1410728A
Authority
GB
United Kingdom
Prior art keywords
layer
metal
plasma
nov
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5435573A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of GB1410728A publication Critical patent/GB1410728A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
GB5435573A 1972-11-22 1973-11-22 Etching methods to their application and to devices produced thereby Expired GB1410728A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11746472A JPS5441870B2 (cg-RX-API-DMAC7.html) 1972-11-22 1972-11-22

Publications (1)

Publication Number Publication Date
GB1410728A true GB1410728A (en) 1975-10-22

Family

ID=14712315

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5435573A Expired GB1410728A (en) 1972-11-22 1973-11-22 Etching methods to their application and to devices produced thereby

Country Status (4)

Country Link
JP (1) JPS5441870B2 (cg-RX-API-DMAC7.html)
DE (1) DE2357913B2 (cg-RX-API-DMAC7.html)
FR (1) FR2208191B1 (cg-RX-API-DMAC7.html)
GB (1) GB1410728A (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127833A (en) * 1974-09-02 1976-03-09 Nippon Telegraph & Telephone Chitaniumunoshokukokuhoho
JPS5190274A (en) * 1975-02-05 1976-08-07 Fuotomasukuno seizohoho
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS5287985A (en) * 1976-01-19 1977-07-22 Mitsubishi Electric Corp Plasma etching method
JPS5325244A (en) * 1976-08-20 1978-03-08 Nichiden Varian Kk Method of plasma etching molybdenum
US4211601A (en) * 1978-07-31 1980-07-08 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
JP3526651B2 (ja) * 1995-04-28 2004-05-17 ローム株式会社 半導体装置および配線方法
US5973342A (en) * 1996-04-25 1999-10-26 Rohm Co., Ltd. Semiconductor device having an iridium electrode
JP6739187B2 (ja) 2016-02-22 2020-08-12 株式会社神戸製鋼所 溶接用Ｎｉ基合金ソリッドワイヤおよびＮｉ基合金溶接金属の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
JPS4975270A (cg-RX-API-DMAC7.html) 1974-07-19
FR2208191B1 (cg-RX-API-DMAC7.html) 1978-11-10
DE2357913A1 (de) 1974-05-30
JPS5441870B2 (cg-RX-API-DMAC7.html) 1979-12-11
DE2357913B2 (de) 1976-06-24
FR2208191A1 (cg-RX-API-DMAC7.html) 1974-06-21

Similar Documents

Publication Publication Date Title
US3971684A (en) Etching thin film circuits and semiconductor chips
US4269654A (en) Silicon nitride and silicon oxide etchant
US4164461A (en) Semiconductor integrated circuit structures and manufacturing methods
US3271286A (en) Selective removal of material using cathodic sputtering
US3474021A (en) Method of forming openings using sequential sputtering and chemical etching
US4264409A (en) Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide
NO119149B (cg-RX-API-DMAC7.html)
US3442701A (en) Method of fabricating semiconductor contacts
US3519504A (en) Method for etching silicon nitride films with sharp edge definition
GB1257408A (cg-RX-API-DMAC7.html)
US4479850A (en) Method for etching integrated semiconductor circuits containing double layers consisting of polysilicon and metal silicide
US4374699A (en) Method of manufacturing a semiconductor device
RU98115928A (ru) Способ изготовления полупроводникового прибора
US3639186A (en) Process for the production of finely etched patterns
JPS52120782A (en) Manufacture of semiconductor device
US3436285A (en) Coatings on germanium bodies
US3526555A (en) Method of masking a semiconductor with a liftable metallic layer
US3615947A (en) Method of selective etching
JPS57157545A (en) Manufacture of semiconductor device
JPS5730376A (en) Manufacture of schottky barrier fet
JPS5750429A (en) Manufacture of semiconductor device
GB1312464A (en) Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device
US4334950A (en) Advantageous fabrication technique for devices relying on magnetic properties
GB1232126A (cg-RX-API-DMAC7.html)
US3549437A (en) Method of producing metal structures on semiconductor surfaces

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19931121