GB1408892A - Semiconductor devices for information storage and transfer - Google Patents

Semiconductor devices for information storage and transfer

Info

Publication number
GB1408892A
GB1408892A GB4237072A GB4237072A GB1408892A GB 1408892 A GB1408892 A GB 1408892A GB 4237072 A GB4237072 A GB 4237072A GB 4237072 A GB4237072 A GB 4237072A GB 1408892 A GB1408892 A GB 1408892A
Authority
GB
United Kingdom
Prior art keywords
charges
electrodes
substrate
insulating layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4237072A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1408892A publication Critical patent/GB1408892A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB4237072A 1971-09-15 1972-09-12 Semiconductor devices for information storage and transfer Expired GB1408892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1971083994U JPS5255987Y2 (enrdf_load_stackoverflow) 1971-09-15 1971-09-15

Publications (1)

Publication Number Publication Date
GB1408892A true GB1408892A (en) 1975-10-08

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4237072A Expired GB1408892A (en) 1971-09-15 1972-09-12 Semiconductor devices for information storage and transfer

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (enrdf_load_stackoverflow)
CA (1) CA1023469A (enrdf_load_stackoverflow)
DE (1) DE2245422A1 (enrdf_load_stackoverflow)
FR (1) FR2153055B1 (enrdf_load_stackoverflow)
GB (1) GB1408892A (enrdf_load_stackoverflow)
IT (1) IT967514B (enrdf_load_stackoverflow)
NL (1) NL7212580A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (enrdf_load_stackoverflow) * 1971-11-29 1979-05-16
JPS5760469Y2 (enrdf_load_stackoverflow) * 1978-06-16 1982-12-23
JPS5935472A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 電荷転送デバイス
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device
US5073808A (en) * 1983-10-07 1991-12-17 Canon Kabushiki Kaisha Solid state semiconductor device

Also Published As

Publication number Publication date
CA1023469A (en) 1977-12-27
IT967514B (it) 1974-03-11
NL7212580A (enrdf_load_stackoverflow) 1973-03-19
JPS4841158U (enrdf_load_stackoverflow) 1973-05-25
FR2153055A1 (enrdf_load_stackoverflow) 1973-04-27
JPS5255987Y2 (enrdf_load_stackoverflow) 1977-12-17
DE2245422A1 (de) 1973-03-22
FR2153055B1 (enrdf_load_stackoverflow) 1976-01-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee