FR2153055A1 - - Google Patents

Info

Publication number
FR2153055A1
FR2153055A1 FR7232841A FR7232841A FR2153055A1 FR 2153055 A1 FR2153055 A1 FR 2153055A1 FR 7232841 A FR7232841 A FR 7232841A FR 7232841 A FR7232841 A FR 7232841A FR 2153055 A1 FR2153055 A1 FR 2153055A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7232841A
Other languages
French (fr)
Other versions
FR2153055B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2153055A1 publication Critical patent/FR2153055A1/fr
Application granted granted Critical
Publication of FR2153055B1 publication Critical patent/FR2153055B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
FR7232841A 1971-09-15 1972-09-15 Expired FR2153055B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1971083994U JPS5255987Y2 (enrdf_load_stackoverflow) 1971-09-15 1971-09-15

Publications (2)

Publication Number Publication Date
FR2153055A1 true FR2153055A1 (enrdf_load_stackoverflow) 1973-04-27
FR2153055B1 FR2153055B1 (enrdf_load_stackoverflow) 1976-01-23

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7232841A Expired FR2153055B1 (enrdf_load_stackoverflow) 1971-09-15 1972-09-15

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (enrdf_load_stackoverflow)
CA (1) CA1023469A (enrdf_load_stackoverflow)
DE (1) DE2245422A1 (enrdf_load_stackoverflow)
FR (1) FR2153055B1 (enrdf_load_stackoverflow)
GB (1) GB1408892A (enrdf_load_stackoverflow)
IT (1) IT967514B (enrdf_load_stackoverflow)
NL (1) NL7212580A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0692825A3 (en) * 1994-07-15 1996-12-04 Sony Corp Analog MISFET with threshold voltage regulator

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (enrdf_load_stackoverflow) * 1971-11-29 1979-05-16
JPS5760469Y2 (enrdf_load_stackoverflow) * 1978-06-16 1982-12-23
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
JPS5935472A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 電荷転送デバイス
JPS6080272A (ja) * 1983-10-07 1985-05-08 Canon Inc 電荷転送素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0692825A3 (en) * 1994-07-15 1996-12-04 Sony Corp Analog MISFET with threshold voltage regulator

Also Published As

Publication number Publication date
GB1408892A (en) 1975-10-08
IT967514B (it) 1974-03-11
CA1023469A (en) 1977-12-27
FR2153055B1 (enrdf_load_stackoverflow) 1976-01-23
JPS4841158U (enrdf_load_stackoverflow) 1973-05-25
JPS5255987Y2 (enrdf_load_stackoverflow) 1977-12-17
DE2245422A1 (de) 1973-03-22
NL7212580A (enrdf_load_stackoverflow) 1973-03-19

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Legal Events

Date Code Title Description
ST Notification of lapse