NL7212580A - - Google Patents

Info

Publication number
NL7212580A
NL7212580A NL7212580A NL7212580A NL7212580A NL 7212580 A NL7212580 A NL 7212580A NL 7212580 A NL7212580 A NL 7212580A NL 7212580 A NL7212580 A NL 7212580A NL 7212580 A NL7212580 A NL 7212580A
Authority
NL
Netherlands
Application number
NL7212580A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7212580A publication Critical patent/NL7212580A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/474Two-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
NL7212580A 1971-09-15 1972-09-15 NL7212580A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1971083994U JPS5255987Y2 (enrdf_load_stackoverflow) 1971-09-15 1971-09-15

Publications (1)

Publication Number Publication Date
NL7212580A true NL7212580A (enrdf_load_stackoverflow) 1973-03-19

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7212580A NL7212580A (enrdf_load_stackoverflow) 1971-09-15 1972-09-15

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (enrdf_load_stackoverflow)
CA (1) CA1023469A (enrdf_load_stackoverflow)
DE (1) DE2245422A1 (enrdf_load_stackoverflow)
FR (1) FR2153055B1 (enrdf_load_stackoverflow)
GB (1) GB1408892A (enrdf_load_stackoverflow)
IT (1) IT967514B (enrdf_load_stackoverflow)
NL (1) NL7212580A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (enrdf_load_stackoverflow) * 1971-11-29 1979-05-16
JPS5760469Y2 (enrdf_load_stackoverflow) * 1978-06-16 1982-12-23
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
JPS5935472A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 電荷転送デバイス
JPS6080272A (ja) * 1983-10-07 1985-05-08 Canon Inc 電荷転送素子
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法

Also Published As

Publication number Publication date
FR2153055A1 (enrdf_load_stackoverflow) 1973-04-27
GB1408892A (en) 1975-10-08
IT967514B (it) 1974-03-11
CA1023469A (en) 1977-12-27
FR2153055B1 (enrdf_load_stackoverflow) 1976-01-23
JPS4841158U (enrdf_load_stackoverflow) 1973-05-25
JPS5255987Y2 (enrdf_load_stackoverflow) 1977-12-17
DE2245422A1 (de) 1973-03-22

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Legal Events

Date Code Title Description
BV The patent application has lapsed