GB1400865A - Semiconductor device manufacture - Google Patents

Semiconductor device manufacture

Info

Publication number
GB1400865A
GB1400865A GB4510172A GB4510172A GB1400865A GB 1400865 A GB1400865 A GB 1400865A GB 4510172 A GB4510172 A GB 4510172A GB 4510172 A GB4510172 A GB 4510172A GB 1400865 A GB1400865 A GB 1400865A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
edges
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4510172A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1400865A publication Critical patent/GB1400865A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
GB4510172A 1971-10-02 1972-09-29 Semiconductor device manufacture Expired GB1400865A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7113561A NL7113561A (enExample) 1971-10-02 1971-10-02

Publications (1)

Publication Number Publication Date
GB1400865A true GB1400865A (en) 1975-07-16

Family

ID=19814158

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4510172A Expired GB1400865A (en) 1971-10-02 1972-09-29 Semiconductor device manufacture

Country Status (9)

Country Link
US (1) US3852104A (enExample)
JP (1) JPS5112991B2 (enExample)
CH (1) CH546008A (enExample)
DE (1) DE2248198A1 (enExample)
ES (1) ES407201A1 (enExample)
FR (1) FR2154778B1 (enExample)
GB (1) GB1400865A (enExample)
IT (1) IT975127B (enExample)
NL (1) NL7113561A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure
IN140846B (enExample) * 1973-08-06 1976-12-25 Rca Corp
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS5293278A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for mos type semiconductor intergrated circuit
US4125427A (en) * 1976-08-27 1978-11-14 Ncr Corporation Method of processing a semiconductor
US4219925A (en) * 1978-09-01 1980-09-02 Teletype Corporation Method of manufacturing a device in a silicon wafer
NL7903158A (nl) * 1979-04-23 1980-10-27 Philips Nv Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze.
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
DE3572086D1 (en) * 1984-12-13 1989-09-07 Siemens Ag Method of producing an isolation separating the active regions of a highly integrated cmos circuit
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5656510A (en) 1994-11-22 1997-08-12 Lucent Technologies Inc. Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3418227A (en) * 1966-03-31 1968-12-24 Texas Instruments Inc Process for fabricating multiple layer circuit boards
US3578515A (en) * 1967-04-05 1971-05-11 Texas Instruments Inc Process for fabricating planar diodes in semi-insulating substrates
GB1250917A (enExample) * 1967-12-30 1971-10-27
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
US3796612A (en) * 1971-08-05 1974-03-12 Scient Micro Syst Inc Semiconductor isolation method utilizing anisotropic etching and differential thermal oxidation

Also Published As

Publication number Publication date
IT975127B (it) 1974-07-20
DE2248198A1 (de) 1973-04-05
NL7113561A (enExample) 1973-04-04
CH546008A (enExample) 1974-02-15
FR2154778A1 (enExample) 1973-05-11
US3852104A (en) 1974-12-03
JPS5112991B2 (enExample) 1976-04-23
JPS4844080A (enExample) 1973-06-25
FR2154778B1 (enExample) 1977-08-26
ES407201A1 (es) 1975-11-01

Similar Documents

Publication Publication Date Title
GB1400865A (en) Semiconductor device manufacture
GB1208574A (en) Methods of manufacturing semiconductor devices
GB1437112A (en) Semiconductor device manufacture
GB1382082A (en) Methods of manufacturing semiconductor devices
GB1327241A (en) Transistor and method of manufacturing the same
GB1436784A (en) Method of making a semiconductor device
GB1418969A (en) Method of making integrated circuits
GB1096484A (en) Improvements in or relating to semiconductor circuits
GB1440643A (en) Method of producint a mis structure
GB1515184A (en) Semiconductor device manufacture
GB1308764A (en) Production of semiconductor components
GB1497199A (en) Semiconductor devices
GB1315573A (en) Formation of openings in insulating layers in mos semiconductor devices
GB1208576A (en) Methods of manufacturing semiconductor devices
JPS57176767A (en) Manufacture of semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
GB1301702A (enExample)
EP0002107A3 (en) Method of making a planar semiconductor device
GB1338042A (en) Method for the production of a field effect transistor
JPS55153370A (en) Manufacturing method of semiconductor device
JPS54117690A (en) Production of semiconductor device
GB1374112A (en) Method of fabrication of an insulated gate field effect transistor
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS5718362A (en) Semiconductor device and manufacture thereof
JPS5636164A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee