GB1393627A - Method of manufacturing a detector of ionising radiation - Google Patents

Method of manufacturing a detector of ionising radiation

Info

Publication number
GB1393627A
GB1393627A GB3458773A GB3458773A GB1393627A GB 1393627 A GB1393627 A GB 1393627A GB 3458773 A GB3458773 A GB 3458773A GB 3458773 A GB3458773 A GB 3458773A GB 1393627 A GB1393627 A GB 1393627A
Authority
GB
United Kingdom
Prior art keywords
detector
july
manufacturing
ionising radiation
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3458773A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722235680 external-priority patent/DE2235680C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1393627A publication Critical patent/GB1393627A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
GB3458773A 1972-07-20 1973-07-19 Method of manufacturing a detector of ionising radiation Expired GB1393627A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722235680 DE2235680C3 (de) 1972-07-20 Ortsauflösende Detektoranordnung und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
GB1393627A true GB1393627A (en) 1975-05-07

Family

ID=5851195

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3458773A Expired GB1393627A (en) 1972-07-20 1973-07-19 Method of manufacturing a detector of ionising radiation

Country Status (4)

Country Link
US (1) US3939555A (https=)
JP (1) JPS4946487A (https=)
FR (1) FR2194047B1 (https=)
GB (1) GB1393627A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322969A (en) * 1997-03-07 1998-09-09 Horiba Ltd Energy dispersive type semiconductor x-ray detector

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219018A (en) * 1975-08-04 1977-01-14 Nippon Telegr & Teleph Corp <Ntt> Automatic equalizing system
US4467342A (en) * 1982-07-15 1984-08-21 Rca Corporation Multi-chip imager
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
JPH0687539B2 (ja) * 1986-12-19 1994-11-02 富士通株式会社 デ−タ伝送システムにおけるプリエンフアシス制御方法及び装置
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US6153501A (en) 1998-05-19 2000-11-28 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
US5498570A (en) * 1994-09-15 1996-03-12 Micron Technology Inc. Method of reducing overetch during the formation of a semiconductor device
JP2985731B2 (ja) * 1995-05-31 1999-12-06 松下電器産業株式会社 Ｘ線撮像装置
GB2315157B (en) 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
US6051501A (en) * 1996-10-09 2000-04-18 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
CH699805A2 (de) * 2008-10-30 2010-04-30 Huber+Suhner Ag Koaxialkabel.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3383760A (en) * 1965-08-09 1968-05-21 Rca Corp Method of making semiconductor devices
US3622906A (en) * 1967-10-24 1971-11-23 Rca Corp Light-emitting diode array
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322969A (en) * 1997-03-07 1998-09-09 Horiba Ltd Energy dispersive type semiconductor x-ray detector
GB2322969B (en) * 1997-03-07 1999-07-21 Horiba Ltd Energy dispersive type semiconductor x-ray detector
US6153883A (en) * 1997-03-07 2000-11-28 Horiba, Ltd. Energy dispersive semiconductor X-ray detector with improved silicon detector

Also Published As

Publication number Publication date
DE2235680A1 (de) 1974-02-07
DE2235680B2 (de) 1977-03-10
FR2194047B1 (https=) 1977-02-18
FR2194047A1 (https=) 1974-02-22
US3939555A (en) 1976-02-24
JPS4946487A (https=) 1974-05-04

Similar Documents

Publication Publication Date Title
GB1375355A (https=)
GB1393627A (en) Method of manufacturing a detector of ionising radiation
JPS54157092A (en) Semiconductor integrated circuit device
US3896477A (en) Multilayer semiconductor switching devices
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB949646A (en) Improvements in or relating to semiconductor devices
GB1484218A (en) Semiconductor rectifiers
GB1355890A (en) Contacts for solar cells
GB887327A (en) Improvements in transistors
DE3262303D1 (en) Semiconductor electron emitting device whose active layer has a doping gradient
GB1379270A (en) Integrated circuit manufacturing process
GB996721A (en) Improvements in and relating to semiconductor devices
JPS5588372A (en) Lateral type transistor
JPS54107270A (en) Semiconductor device and its production
GB1208030A (en) A semiconductor device
JPS6476768A (en) Semiconductor device and manufacture thereof
GB916379A (en) Improvements in and relating to semiconductor junction units
FR2193257A1 (en) Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask
JPS6437858A (en) Semiconductor integrated circuit
JPS55123164A (en) Semiconductor device
JPS5743475A (en) Semiconductor device
JPS55107260A (en) Power transistor
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS52155067A (en) Mesa type semiconductor device
JPS5546584A (en) Complementary insulated gate field effect semiconductor device and method of fabricating the same

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee