GB1391223A - Lagic elements - Google Patents

Lagic elements

Info

Publication number
GB1391223A
GB1391223A GB4680672A GB4680672A GB1391223A GB 1391223 A GB1391223 A GB 1391223A GB 4680672 A GB4680672 A GB 4680672A GB 4680672 A GB4680672 A GB 4680672A GB 1391223 A GB1391223 A GB 1391223A
Authority
GB
United Kingdom
Prior art keywords
type
region
drain
switching transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4680672A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712150794 external-priority patent/DE2150794C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1391223A publication Critical patent/GB1391223A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Logic Circuits (AREA)
GB4680672A 1971-10-12 1972-10-11 Lagic elements Expired GB1391223A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712150794 DE2150794C3 (de) 1971-10-12 Verfahren zur Herstellung einer integrierten Logikschaltung und Anwendung des Verfahrens

Publications (1)

Publication Number Publication Date
GB1391223A true GB1391223A (en) 1975-04-16

Family

ID=5822127

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4680672A Expired GB1391223A (en) 1971-10-12 1972-10-11 Lagic elements

Country Status (7)

Country Link
JP (1) JPS4847777A (enrdf_load_stackoverflow)
BE (1) BE789992A (enrdf_load_stackoverflow)
FR (1) FR2156233B1 (enrdf_load_stackoverflow)
GB (1) GB1391223A (enrdf_load_stackoverflow)
IT (1) IT968836B (enrdf_load_stackoverflow)
LU (1) LU66265A1 (enrdf_load_stackoverflow)
NL (1) NL7213812A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928993B2 (ja) * 1975-03-10 1984-07-17 日本電信電話株式会社 半導体装置とその製造方法
JPS5227278A (en) * 1975-08-26 1977-03-01 Agency Of Ind Science & Technol Semicondcutor unit
US4087902A (en) * 1976-06-23 1978-05-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Field effect transistor and method of construction thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434179B2 (enrdf_load_stackoverflow) * 1972-07-28 1979-10-25

Also Published As

Publication number Publication date
JPS4847777A (enrdf_load_stackoverflow) 1973-07-06
IT968836B (it) 1974-03-20
FR2156233B1 (enrdf_load_stackoverflow) 1976-08-20
NL7213812A (enrdf_load_stackoverflow) 1973-04-16
BE789992A (fr) 1973-04-12
DE2150794B2 (de) 1976-12-30
DE2150794A1 (de) 1973-04-19
FR2156233A1 (enrdf_load_stackoverflow) 1973-05-25
LU66265A1 (enrdf_load_stackoverflow) 1973-04-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee