GB1387021A - Semiconductor device manufacture - Google Patents

Semiconductor device manufacture

Info

Publication number
GB1387021A
GB1387021A GB1660972A GB1660972A GB1387021A GB 1387021 A GB1387021 A GB 1387021A GB 1660972 A GB1660972 A GB 1660972A GB 1660972 A GB1660972 A GB 1660972A GB 1387021 A GB1387021 A GB 1387021A
Authority
GB
United Kingdom
Prior art keywords
type
layer
island
semi
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1660972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1387021A publication Critical patent/GB1387021A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB1660972A 1971-04-14 1972-04-11 Semiconductor device manufacture Expired GB1387021A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (enrdf_load_stackoverflow) 1971-04-14 1971-04-14

Publications (1)

Publication Number Publication Date
GB1387021A true GB1387021A (en) 1975-03-12

Family

ID=19812915

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1660972A Expired GB1387021A (en) 1971-04-14 1972-04-11 Semiconductor device manufacture

Country Status (11)

Country Link
AU (1) AU470407B2 (enrdf_load_stackoverflow)
BE (1) BE782012A (enrdf_load_stackoverflow)
BR (1) BR7202251D0 (enrdf_load_stackoverflow)
CH (1) CH539952A (enrdf_load_stackoverflow)
DE (1) DE2216642C3 (enrdf_load_stackoverflow)
ES (1) ES401687A1 (enrdf_load_stackoverflow)
FR (1) FR2133692B1 (enrdf_load_stackoverflow)
GB (1) GB1387021A (enrdf_load_stackoverflow)
IT (1) IT951314B (enrdf_load_stackoverflow)
NL (1) NL7105000A (enrdf_load_stackoverflow)
SE (1) SE383582B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5534619U (enrdf_load_stackoverflow) * 1978-08-25 1980-03-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE740938A (enrdf_load_stackoverflow) * 1967-12-05 1970-04-01

Also Published As

Publication number Publication date
CH539952A (de) 1973-07-31
ES401687A1 (es) 1975-03-16
DE2216642B2 (de) 1979-04-12
BE782012A (fr) 1972-10-13
IT951314B (it) 1973-06-30
FR2133692A1 (enrdf_load_stackoverflow) 1972-12-01
DE2216642A1 (de) 1972-10-19
BR7202251D0 (pt) 1973-06-07
SE383582B (sv) 1976-03-15
FR2133692B1 (enrdf_load_stackoverflow) 1977-08-19
DE2216642C3 (de) 1979-12-13
AU470407B2 (en) 1973-10-18
AU4093672A (en) 1973-10-18
NL7105000A (enrdf_load_stackoverflow) 1972-10-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee