GB1386178A - Gunn oscillators - Google Patents
Gunn oscillatorsInfo
- Publication number
- GB1386178A GB1386178A GB4144872A GB4144872A GB1386178A GB 1386178 A GB1386178 A GB 1386178A GB 4144872 A GB4144872 A GB 4144872A GB 4144872 A GB4144872 A GB 4144872A GB 1386178 A GB1386178 A GB 1386178A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- band
- sept
- field
- induced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1386178 Semi-conductor devices SIEMENS AG 7 Sept 1972 [28 Sept 1971] 41448/72 Heading H1K Conditions under which a "positive hole" Gunn effect can occur in a drift field region 8 between electrodes 4, 6 on the surface of an elemental (Si or Ge) semi-conductor body 2 are induced by the presence of an electric field applied transversely across the drift field region 8. The transverse field causes the valence band in the region 8 to be split, resulting in formation of a sub-band populated with high mobility positive holes (light holes). The sub-band light hole population and the energy split between bands increases with increasing transverse field strength. Preferably the transverse field is applied by means of a gate electrode 10 capacitively coupled through insulating layer 12 to the region 8. In addition mechanical stress may be induced at the interface of the region 8 and the insulation 12, e.g. by virtue of the differing thermal coefficients of expansion of the respective materials, in order to increase the valence band splitting. For a Si body 2 the insulation 12 may be aluminium oxide or silicon nitride.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2148379A DE2148379C3 (en) | 1971-09-28 | 1971-09-28 | Negative impedance oscillator for the generation of very high-frequency electromagnetic voltages |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1386178A true GB1386178A (en) | 1975-03-05 |
Family
ID=5820792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4144872A Expired GB1386178A (en) | 1971-09-28 | 1972-09-07 | Gunn oscillators |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4843282A (en) |
| BE (1) | BE789413A (en) |
| CH (1) | CH548137A (en) |
| DE (1) | DE2148379C3 (en) |
| FR (1) | FR2154555B3 (en) |
| GB (1) | GB1386178A (en) |
| IT (1) | IT969355B (en) |
| LU (1) | LU66179A1 (en) |
| NL (1) | NL7212959A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125617A (en) * | 1982-08-06 | 1984-03-07 | Standard Telephones Cables Ltd | Negative effective mass device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444902A (en) * | 1977-09-14 | 1979-04-09 | Daburiyuu Aaru Gureesu Kk | Support for photosensitive resin printing plate |
| JPH0329168Y2 (en) * | 1981-03-14 | 1991-06-21 | ||
| JPS5836494A (en) * | 1981-08-28 | 1983-03-03 | Oji Paper Co Ltd | Base material for electrophotographic type lithographic plate |
-
0
- BE BE789413D patent/BE789413A/en unknown
-
1971
- 1971-09-28 DE DE2148379A patent/DE2148379C3/en not_active Expired
-
1972
- 1972-08-10 CH CH1181772A patent/CH548137A/en not_active IP Right Cessation
- 1972-09-07 GB GB4144872A patent/GB1386178A/en not_active Expired
- 1972-09-22 FR FR7233617A patent/FR2154555B3/fr not_active Expired
- 1972-09-25 NL NL7212959A patent/NL7212959A/xx unknown
- 1972-09-27 IT IT29729/72A patent/IT969355B/en active
- 1972-09-27 JP JP47096979A patent/JPS4843282A/ja active Pending
- 1972-09-27 LU LU66179A patent/LU66179A1/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125617A (en) * | 1982-08-06 | 1984-03-07 | Standard Telephones Cables Ltd | Negative effective mass device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2148379C3 (en) | 1974-10-31 |
| CH548137A (en) | 1974-04-11 |
| FR2154555A1 (en) | 1973-05-11 |
| IT969355B (en) | 1974-03-30 |
| BE789413A (en) | 1973-03-28 |
| DE2148379A1 (en) | 1973-04-05 |
| FR2154555B3 (en) | 1975-10-17 |
| LU66179A1 (en) | 1973-04-02 |
| JPS4843282A (en) | 1973-06-22 |
| DE2148379B2 (en) | 1974-03-21 |
| NL7212959A (en) | 1973-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |