GB1386098A - Method of controllably altering the conductivity of a glassy amorphous material - Google Patents

Method of controllably altering the conductivity of a glassy amorphous material

Info

Publication number
GB1386098A
GB1386098A GB967272A GB967272A GB1386098A GB 1386098 A GB1386098 A GB 1386098A GB 967272 A GB967272 A GB 967272A GB 967272 A GB967272 A GB 967272A GB 1386098 A GB1386098 A GB 1386098A
Authority
GB
United Kingdom
Prior art keywords
march
glassy amorphous
conductivity
amorphous material
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB967272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innotech Corp USA
Original Assignee
Innotech Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innotech Corp USA filed Critical Innotech Corp USA
Publication of GB1386098A publication Critical patent/GB1386098A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB967272A 1971-03-09 1972-03-02 Method of controllably altering the conductivity of a glassy amorphous material Expired GB1386098A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12242271A 1971-03-09 1971-03-09
US22793272A 1972-02-22 1972-02-22

Publications (1)

Publication Number Publication Date
GB1386098A true GB1386098A (en) 1975-03-05

Family

ID=22402639

Family Applications (1)

Application Number Title Priority Date Filing Date
GB967272A Expired GB1386098A (en) 1971-03-09 1972-03-02 Method of controllably altering the conductivity of a glassy amorphous material

Country Status (8)

Country Link
US (1) US3921191A (enExample)
CA (2) CA959175A (enExample)
DE (1) DE2211156B2 (enExample)
FR (1) FR2128729A1 (enExample)
GB (1) GB1386098A (enExample)
IL (1) IL38881A (enExample)
IT (1) IT952933B (enExample)
NL (1) NL7203132A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3208856A1 (en) * 2016-02-17 2017-08-23 Heraeus Deutschland GmbH & Co. KG Solid electrolyte for reram
EP3208855A1 (en) * 2016-02-17 2017-08-23 Heraeus Deutschland GmbH & Co. KG Resistive switching memory cell

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2526804B2 (de) * 1975-06-16 1979-06-07 Jenaer Glaswerk Schott & Gen., 6500 Mainz Verfahren zur Veränderung der
US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
US4353506A (en) * 1980-09-15 1982-10-12 L. R. Nelson Corporation Pop-up sprinkler
DE3503264A1 (de) * 1985-01-31 1986-08-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern
US5319218A (en) * 1993-05-06 1994-06-07 The United States Of America As Represented By The Secretary Of The Army Pulse sharpening using an optical pulse
US7988071B2 (en) 2007-10-30 2011-08-02 Bredberg Anthony J Lawn sprinkler
US9227207B1 (en) 2013-03-15 2016-01-05 Anthony J. Bredberg Multi-nozzle cam driven sprinkler head
US9108206B1 (en) 2013-03-15 2015-08-18 Anthony J. Bredberg Water control system for sprinkler nozzle
CN105322091B (zh) * 2015-12-09 2018-09-25 中国科学院物理研究所 一种光写入阻变存储单元及其制备、操作方法和应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451126A (en) * 1964-08-08 1969-06-24 Rikagaku Kenkyusho Method of making a woven fiber circuit element
US3507646A (en) * 1965-12-27 1970-04-21 Xerox Corp Electrophotographic process using a single phase photoconductive glass imaging layer
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
JPS5130438B1 (enExample) * 1970-04-06 1976-09-01

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3208856A1 (en) * 2016-02-17 2017-08-23 Heraeus Deutschland GmbH & Co. KG Solid electrolyte for reram
EP3208855A1 (en) * 2016-02-17 2017-08-23 Heraeus Deutschland GmbH & Co. KG Resistive switching memory cell
WO2017140646A1 (en) * 2016-02-17 2017-08-24 Heraeus Deutschland GmbH & Co. KG Resistive switching memory cell
WO2017140647A1 (en) * 2016-02-17 2017-08-24 Heraeus Deutschland GmbH & Co. KG Solid electrolyte for reram
KR20180110092A (ko) * 2016-02-17 2018-10-08 헤레우스 도이칠란트 게엠베하 운트 코. 카게 저항성 스위칭 메모리 셀
KR20180112828A (ko) * 2016-02-17 2018-10-12 헤레우스 도이칠란트 게엠베하 운트 코. 카게 ReRAM용 고체 전해질
TWI662727B (zh) * 2016-02-17 2019-06-11 德商赫瑞斯德國有限兩合公司 電阻式切換記憶體單元
US10777744B2 (en) 2016-02-17 2020-09-15 Heraeus Deutschland GmbH & Co. KG Resistive switching memory cell including switchable solid electrolyte having disclosed composition
US10815143B2 (en) 2016-02-17 2020-10-27 Heraeus Deutschland GmbH & Co. KG Solid electrolyte for ReRAM
KR102170078B1 (ko) 2016-02-17 2020-10-27 헤레우스 도이칠란트 게엠베하 운트 코. 카게 저항성 스위칭 메모리 셀
KR102171138B1 (ko) 2016-02-17 2020-10-29 헤레우스 도이칠란트 게엠베하 운트 코. 카게 ReRAM용 고체 전해질

Also Published As

Publication number Publication date
IL38881A (en) 1976-02-29
FR2128729A1 (en) 1972-10-20
DE2211156A1 (de) 1972-09-14
NL7203132A (enExample) 1972-09-12
IT952933B (it) 1973-07-30
DE2211156B2 (de) 1976-12-30
CA959175A (en) 1974-12-10
IL38881A0 (en) 1972-05-30
CA959178A (en) 1974-12-10
FR2128729B1 (enExample) 1977-12-30
US3921191A (en) 1975-11-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee