DE2211156B2 - Verfahren zum kontrollierbaren aendern der leitfaehigkeit eines glasartigen festkoerpers und damit hergestellte halbleiterbauelemente - Google Patents

Verfahren zum kontrollierbaren aendern der leitfaehigkeit eines glasartigen festkoerpers und damit hergestellte halbleiterbauelemente

Info

Publication number
DE2211156B2
DE2211156B2 DE19722211156 DE2211156A DE2211156B2 DE 2211156 B2 DE2211156 B2 DE 2211156B2 DE 19722211156 DE19722211156 DE 19722211156 DE 2211156 A DE2211156 A DE 2211156A DE 2211156 B2 DE2211156 B2 DE 2211156B2
Authority
DE
Germany
Prior art keywords
glass
conductivity
layer
vitreous
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722211156
Other languages
German (de)
English (en)
Other versions
DE2211156A1 (de
Inventor
Seymour Fairfield Conn. Merrin (V-StA.)
Original Assignee
Innotech Corp., Norwalk, Conn. (V.StA.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innotech Corp., Norwalk, Conn. (V.StA.) filed Critical Innotech Corp., Norwalk, Conn. (V.StA.)
Publication of DE2211156A1 publication Critical patent/DE2211156A1/de
Publication of DE2211156B2 publication Critical patent/DE2211156B2/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE19722211156 1971-03-09 1972-03-08 Verfahren zum kontrollierbaren aendern der leitfaehigkeit eines glasartigen festkoerpers und damit hergestellte halbleiterbauelemente Pending DE2211156B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12242271A 1971-03-09 1971-03-09

Publications (2)

Publication Number Publication Date
DE2211156A1 DE2211156A1 (de) 1972-09-14
DE2211156B2 true DE2211156B2 (de) 1976-12-30

Family

ID=22402639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722211156 Pending DE2211156B2 (de) 1971-03-09 1972-03-08 Verfahren zum kontrollierbaren aendern der leitfaehigkeit eines glasartigen festkoerpers und damit hergestellte halbleiterbauelemente

Country Status (8)

Country Link
US (1) US3921191A (enExample)
CA (2) CA959175A (enExample)
DE (1) DE2211156B2 (enExample)
FR (1) FR2128729A1 (enExample)
GB (1) GB1386098A (enExample)
IL (1) IL38881A (enExample)
IT (1) IT952933B (enExample)
NL (1) NL7203132A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2526804B2 (de) * 1975-06-16 1979-06-07 Jenaer Glaswerk Schott & Gen., 6500 Mainz Verfahren zur Veränderung der
US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
US4353506A (en) * 1980-09-15 1982-10-12 L. R. Nelson Corporation Pop-up sprinkler
DE3503264A1 (de) * 1985-01-31 1986-08-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern
US5319218A (en) * 1993-05-06 1994-06-07 The United States Of America As Represented By The Secretary Of The Army Pulse sharpening using an optical pulse
US7988071B2 (en) 2007-10-30 2011-08-02 Bredberg Anthony J Lawn sprinkler
US9227207B1 (en) 2013-03-15 2016-01-05 Anthony J. Bredberg Multi-nozzle cam driven sprinkler head
US9108206B1 (en) 2013-03-15 2015-08-18 Anthony J. Bredberg Water control system for sprinkler nozzle
CN105322091B (zh) * 2015-12-09 2018-09-25 中国科学院物理研究所 一种光写入阻变存储单元及其制备、操作方法和应用
EP3208856B1 (en) * 2016-02-17 2019-07-10 Heraeus Deutschland GmbH & Co. KG Solid electrolyte for reram
EP3208855B1 (en) * 2016-02-17 2019-06-26 Heraeus Deutschland GmbH & Co. KG Resistive switching memory cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451126A (en) * 1964-08-08 1969-06-24 Rikagaku Kenkyusho Method of making a woven fiber circuit element
US3507646A (en) * 1965-12-27 1970-04-21 Xerox Corp Electrophotographic process using a single phase photoconductive glass imaging layer
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
JPS5130438B1 (enExample) * 1970-04-06 1976-09-01

Also Published As

Publication number Publication date
IL38881A (en) 1976-02-29
FR2128729A1 (en) 1972-10-20
DE2211156A1 (de) 1972-09-14
NL7203132A (enExample) 1972-09-12
IT952933B (it) 1973-07-30
CA959175A (en) 1974-12-10
IL38881A0 (en) 1972-05-30
CA959178A (en) 1974-12-10
FR2128729B1 (enExample) 1977-12-30
GB1386098A (en) 1975-03-05
US3921191A (en) 1975-11-18

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