GB1370292A - Method for growing crystals - Google Patents

Method for growing crystals

Info

Publication number
GB1370292A
GB1370292A GB104173A GB104173A GB1370292A GB 1370292 A GB1370292 A GB 1370292A GB 104173 A GB104173 A GB 104173A GB 104173 A GB104173 A GB 104173A GB 1370292 A GB1370292 A GB 1370292A
Authority
GB
United Kingdom
Prior art keywords
crystal
substrate
burger
grown
vector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB104173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1370292A publication Critical patent/GB1370292A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB104173A 1972-03-03 1973-01-08 Method for growing crystals Expired GB1370292A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23169572A 1972-03-03 1972-03-03

Publications (1)

Publication Number Publication Date
GB1370292A true GB1370292A (en) 1974-10-16

Family

ID=22870296

Family Applications (1)

Application Number Title Priority Date Filing Date
GB104173A Expired GB1370292A (en) 1972-03-03 1973-01-08 Method for growing crystals

Country Status (5)

Country Link
US (1) US3788890A (enrdf_load_stackoverflow)
JP (1) JPS5720279B2 (enrdf_load_stackoverflow)
DE (1) DE2310117A1 (enrdf_load_stackoverflow)
FR (1) FR2174864B1 (enrdf_load_stackoverflow)
GB (1) GB1370292A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1498516A4 (en) * 2002-04-19 2008-04-23 Komatsu Denshi Kinzoku Kk PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON, PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON RINGS, CRYSTAL GERM FOR SINGLE CRYSTALLINE SILICON PRODUCTION, MONOCRYSTALLINE SILICON INGOT, AND MONOCRYSTAL SILICON SINK

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
GB8325544D0 (en) * 1983-09-23 1983-10-26 Howe S H Orienting crystals
JPS61151098A (ja) * 1984-12-24 1986-07-09 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
US4908074A (en) * 1986-02-28 1990-03-13 Kyocera Corporation Gallium arsenide on sapphire heterostructure
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
US4857415A (en) * 1987-05-29 1989-08-15 Raytheon Company Method of producing single crystalline magnetic film having bi-axial anisotropy
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
GB0611926D0 (en) * 2006-06-16 2006-07-26 Rolls Royce Plc Welding of single crystal alloys
CA3087726A1 (en) 2017-01-06 2018-07-12 Direct-C Limited Polymeric nanocomposite based sensor and coating systems and their applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1498516A4 (en) * 2002-04-19 2008-04-23 Komatsu Denshi Kinzoku Kk PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON, PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON RINGS, CRYSTAL GERM FOR SINGLE CRYSTALLINE SILICON PRODUCTION, MONOCRYSTALLINE SILICON INGOT, AND MONOCRYSTAL SILICON SINK

Also Published As

Publication number Publication date
FR2174864A1 (enrdf_load_stackoverflow) 1973-10-19
JPS5720279B2 (enrdf_load_stackoverflow) 1982-04-27
DE2310117A1 (de) 1973-09-06
US3788890A (en) 1974-01-29
FR2174864B1 (enrdf_load_stackoverflow) 1977-04-22
JPS48101381A (enrdf_load_stackoverflow) 1973-12-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee