GB1367325A - Negative resistance semiconductor element - Google Patents
Negative resistance semiconductor elementInfo
- Publication number
- GB1367325A GB1367325A GB4508071A GB4508071A GB1367325A GB 1367325 A GB1367325 A GB 1367325A GB 4508071 A GB4508071 A GB 4508071A GB 4508071 A GB4508071 A GB 4508071A GB 1367325 A GB1367325 A GB 1367325A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- thyristor
- gate
- trapping
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8912970A JPS509156B1 (de) | 1970-10-09 | 1970-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1367325A true GB1367325A (en) | 1974-09-18 |
Family
ID=13962261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4508071A Expired GB1367325A (en) | 1970-10-09 | 1971-09-28 | Negative resistance semiconductor element |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS509156B1 (de) |
| CA (1) | CA924420A (de) |
| FR (1) | FR2110326B1 (de) |
| GB (1) | GB1367325A (de) |
| NL (1) | NL7113825A (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364073A (en) | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| US4941030A (en) * | 1985-02-05 | 1990-07-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| EP1743339A2 (de) * | 2004-05-06 | 2007-01-17 | Micron Technology, Inc. | Silizium-auf-isolator-lese-schreib-festspeicher mit einem seitlichen thyristor und einer fallenschicht |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
| US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
| US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
| US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
| US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
| US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
| US6965129B1 (en) | 2002-11-06 | 2005-11-15 | T-Ram, Inc. | Thyristor-based device having dual control ports |
-
1970
- 1970-10-09 JP JP8912970A patent/JPS509156B1/ja active Pending
-
1971
- 1971-09-28 GB GB4508071A patent/GB1367325A/en not_active Expired
- 1971-09-30 CA CA124099A patent/CA924420A/en not_active Expired
- 1971-10-08 FR FR7136321A patent/FR2110326B1/fr not_active Expired
- 1971-10-08 NL NL7113825A patent/NL7113825A/xx not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364073A (en) | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| US4941030A (en) * | 1985-02-05 | 1990-07-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| EP1743339A2 (de) * | 2004-05-06 | 2007-01-17 | Micron Technology, Inc. | Silizium-auf-isolator-lese-schreib-festspeicher mit einem seitlichen thyristor und einer fallenschicht |
| EP1743339A4 (de) * | 2004-05-06 | 2007-08-01 | Micron Technology Inc | Silizium-auf-isolator-lese-schreib-festspeicher mit einem seitlichen thyristor und einer fallenschicht |
Also Published As
| Publication number | Publication date |
|---|---|
| CA924420A (en) | 1973-04-10 |
| DE2149761B2 (de) | 1976-08-05 |
| JPS509156B1 (de) | 1975-04-10 |
| DE2149761A1 (de) | 1972-04-13 |
| NL7113825A (de) | 1972-04-11 |
| FR2110326A1 (de) | 1972-06-02 |
| AU3395971A (en) | 1973-04-05 |
| FR2110326B1 (de) | 1977-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |