GB1364035A - Method for the manufacturing of a zener diode - Google Patents
Method for the manufacturing of a zener diodeInfo
- Publication number
- GB1364035A GB1364035A GB743173A GB743173A GB1364035A GB 1364035 A GB1364035 A GB 1364035A GB 743173 A GB743173 A GB 743173A GB 743173 A GB743173 A GB 743173A GB 1364035 A GB1364035 A GB 1364035A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- diffused
- mask
- donor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2207654A DE2207654B2 (de) | 1972-02-18 | 1972-02-18 | Verfahren zum Herstellen einer Zenerdiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1364035A true GB1364035A (en) | 1974-08-21 |
Family
ID=5836353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB743173A Expired GB1364035A (en) | 1972-02-18 | 1973-02-15 | Method for the manufacturing of a zener diode |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU463838B2 (enrdf_load_html_response) |
| DE (1) | DE2207654B2 (enrdf_load_html_response) |
| FR (1) | FR2172191B1 (enrdf_load_html_response) |
| GB (1) | GB1364035A (enrdf_load_html_response) |
| IT (1) | IT979130B (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2149205A (en) * | 1983-10-31 | 1985-06-05 | Burr Brown Corp | Integrated circuit reference diode and fabrication method therefor |
| EP1164643A3 (en) * | 2000-06-07 | 2004-09-29 | NEC Electronics Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| CN113206157A (zh) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | 体内击穿玻钝二极管及制造方法 |
| CN114551567A (zh) * | 2022-01-21 | 2022-05-27 | 吉林华微电子股份有限公司 | 一种齐纳二极管及齐纳二极管制作方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7513161A (nl) * | 1975-11-11 | 1977-05-13 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze. |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| NL7907680A (nl) * | 1979-10-18 | 1981-04-22 | Philips Nv | Zenerdiode. |
| NL187942C (nl) * | 1980-08-18 | 1992-02-17 | Philips Nv | Zenerdiode en werkwijze ter vervaardiging daarvan. |
| FR2500855A1 (fr) * | 1981-02-27 | 1982-09-03 | Thomson Csf | Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue |
| US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
-
1972
- 1972-02-18 DE DE2207654A patent/DE2207654B2/de not_active Ceased
-
1973
- 1973-02-08 FR FR7305086A patent/FR2172191B1/fr not_active Expired
- 1973-02-08 AU AU52003/73A patent/AU463838B2/en not_active Expired
- 1973-02-15 IT IT20417/73A patent/IT979130B/it active
- 1973-02-15 GB GB743173A patent/GB1364035A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2149205A (en) * | 1983-10-31 | 1985-06-05 | Burr Brown Corp | Integrated circuit reference diode and fabrication method therefor |
| EP1164643A3 (en) * | 2000-06-07 | 2004-09-29 | NEC Electronics Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| CN113206157A (zh) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | 体内击穿玻钝二极管及制造方法 |
| CN114551567A (zh) * | 2022-01-21 | 2022-05-27 | 吉林华微电子股份有限公司 | 一种齐纳二极管及齐纳二极管制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2172191B1 (enrdf_load_html_response) | 1978-04-14 |
| IT979130B (it) | 1974-09-30 |
| DE2207654B2 (de) | 1974-02-14 |
| AU5200373A (en) | 1974-08-08 |
| AU463838B2 (en) | 1975-08-07 |
| DE2207654A1 (de) | 1973-08-30 |
| FR2172191A1 (enrdf_load_html_response) | 1973-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |