CN113206157A - 体内击穿玻钝二极管及制造方法 - Google Patents
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Abstract
本发明提供了一种体内击穿玻钝二极管及制造方法，该玻钝二极管包括管芯、电极引线，电极引线设于管芯的两端，管芯与电极引线的外周包覆有钝化玻璃，管芯两端的电极引线分别伸出钝化玻璃；管芯的正面中部为P+突变结，围绕P+突变结设有一圈P区缓变结，P+突变结的端面设有铝片，管芯的背面为N+区扩散。本发明在管芯P面的中心位置装上铝片，在装电极引线、管芯烧焊时，P面与铝片又合金形成P+突变结，P面周围的区域仍然是P区缓变结；N型硅片衬底的背面形成N+区，与电极引线形成良好的欧姆接触；在相同衬底N区电阻率下，P区的反向击穿电压高于P+的的反向击穿电压；从而实现了体内击穿，大大提高了二极管的成品率及使用可靠性。
Description
技术领域
本发明涉及二极管技术领域，具体涉及一种体内击穿玻钝二极管及制造方法。
背景技术
玻璃钝化实体封装二极管简称玻钝二极管，具有高温稳定性、抗辐照能力强、可靠性高、成本低等特点，广泛应用于中高端领域。玻璃钝化实体封装二极管为台面型二极管，管芯裂片后PN结是暴露在管芯的侧面的，需要对PN结的台面进行腐蚀、清洗、钝化保护。由于①离子沾污，②钝化材料的钝化程度、绝缘强度限制，③钝化材料与硅的匹配程度差异，由于这些原因，PN结的台面成为了二极管最薄弱的地方，往往反向击穿都是台面先于体内击穿；而体内击穿是可以恢复的，台面击穿往往都是破坏性的，最终导致二极管失效，大大降低了二极管的成品率及使用可靠性。
发明内容
为解决上述技术问题，本发明提供了一种体内击穿玻钝二极管及制造方法。
本发明通过以下技术方案得以实现。
本发明提供了一种体内击穿玻钝二极管，包括管芯、电极引线，所述电极引线设于管芯的两端，管芯与电极引线的外周包覆有钝化玻璃，管芯两端的电极引线分别伸出钝化玻璃；所述管芯的正面中部为P+突变结，围绕P+突变结设有一圈P区缓变结，P+突变结的端面设有铝片，管芯的背面为N+区扩散。
所述N+区扩散端部均匀地设有一层金属化铝。
所述P+突变结为铝片在P区缓变面上烧焊扩散形成。
所述电极引线包括铜引线、钼柱，钼柱一端与管芯连接，另一端与铜引线连接，钼柱侧面被包覆于钝化玻璃内，铜引线伸出钝化玻璃。
所述铜引线与钼柱之间通过银铜焊片角焊缝焊接。
位于管芯正面的钼柱与铝片连接，铝片周围为钝化玻璃。
本发明还提供了上述体内击穿玻钝二极管的制造方法，包括如下步骤：
步骤一、单晶片，选择电阻率为0.005Ω·cm～500Ω·cm的N型单晶硅，进行磨片处理；
步骤二、磷硼扩散，得到N型扩散的硅片，磷面结深为30μm，方块电阻≤3Ω/□，硼面结深为25μm，方块电阻≤5Ω/□；
步骤三、喷砂，用压缩空气携带金刚砂去除硼扩散面形成的硼硅玻璃层；
步骤四、蒸铝与合金，在保留的磷扩散面蒸铝，细磨面不蒸铝，铝层厚度为6～16μm，蒸铝后在高温下进行合金处理；
步骤五、裂片，裂片后用HF：HNO3＝1：5(体积比)的腐蚀剂腐蚀80～180S，腐蚀后用大量冷去离子水冲洗，酒精脱水烘干；
步骤六、装模，在管芯的P面中部装配铝片，然后将电极引线装配在管芯两端，装配后在高温下进行烧结处理；(装模后如图2所示，图中该步骤还未形成P+突变结，正面为P区，反面为N+区扩散。)
步骤七、放入腐蚀剂中进行台面腐蚀，腐蚀后用热去离子水冲洗，并用热去离子水煮沸5次，用热、冷去离子水交叉冲洗半小时以上，然后放入钝化液中钝化处理；
步骤八、将产品包覆于玻璃粉中，然后高温成型，在20～70min升温到650℃，保持1～8min，然后以速率≤3℃/min降温，整形后得到产品。
所述步骤一的磨片处理为，从一面磨片至300μm。
所述步骤二、磷硼扩散为，在温度1100-1280℃下扩散30h。
所述步骤三的金刚砂代表规格为302#、303#，压缩空气气压为100～500kPa。
所述步骤四的合金处理，是在温度450～550℃下恒温8min合金。
所述步骤六的铝片成分为硅:铝＝3:97，厚度为50～100μm。在裂片为φ1.5mm的情况下，铝片大小为φ1mm。
所述步骤六的烧结工艺为，真空度≥0.0034Pa，恒温温度为660～850℃，恒温时间为10min，升温速率为5～25℃/min，降温速率≤3℃/min，降温至100℃以下取出产品。
所述步骤七的腐蚀剂为2～12％KOH溶液，腐蚀温度：80～100℃，腐蚀时间2～25min；钝化液为质量百分比≥30％双氧水、≥85％双氧水和离子水按1:1:1.3混合的混合液，钝化温度为55～60℃；钝化时间1～10min。
本发明的有益效果在于：
本发明在管芯P面的中心位置装上铝片，在装电极引线、管芯烧焊时，P面与铝片又合金形成P+突变结，P面周围的区域仍然是P区缓变结；N型硅片衬底的背面形成N+区，与电极引线形成良好的欧姆接触；在相同衬底N区电阻率下，P区的反向击穿电压高于P+的的反向击穿电压；从而实现了体内击穿，大大提高了二极管的成品率及使用可靠性。
附图说明
图1是本发明的结构示意图。
图2是本发明的制造方法中装模后的结构示意图。
图中：1-管芯；2-P+突变结；3-P区缓变结；4-铝片；5-N+区扩散；6-电极引线；7-钝化玻璃；8-金属化铝；9-铜引线；10-银铜焊片；11-钼柱。
具体实施方式
下面进一步描述本发明的技术方案，但要求保护的范围并不局限于所述。
如图1所示为本发明的结构示意图：
本发明提供了一种体内击穿玻钝二极管，包括管芯1、电极引线6，所述电极引线6设于管芯1的两端，管芯1与电极引线6的外周包覆有钝化玻璃7，管芯1两端的电极引线6分别伸出钝化玻璃7；所述管芯1的正面中部为P+突变结2，围绕P+突变结2设有一圈P区缓变结3，P+突变结2的端面设有铝片4，管芯1的背面为N+区扩散5。
原理：通过一次磷/硼扩散，N型硅片衬底的背面形成N+区，用于与电极引线6形成良好的欧姆接触。N型硅片衬底的正面上形成P区，其杂质浓度为缓变结，通过管芯1裂片、腐蚀后，在装电极引线6、管芯1烧焊时，在管芯1P面的中心位置装上铝片4，在管芯1烧焊电极引线6的同时，P面与铝片4又合金，合金结穿过P面区，使管芯1中心区域形成P+突变结2，P面周围的区域仍然是P区缓变结3；在相同衬底N区电阻率下，P区的反向击穿电压高于P+的的反向击穿电压；从而实现了体内击穿，大大提高了二极管的成品率及使用可靠性。
本发明在管芯1P面的中心位置装上铝片4，在装电极引线6、管芯1烧焊时，P面与铝片4又合金形成P+突变结2，P面周围的区域仍然是P区缓变结3；N型硅片衬底的背面形成N+区，与电极引线6形成良好的欧姆接触；在相同衬底N区电阻率下，P区的反向击穿电压高于P+的的反向击穿电压；从而实现了体内击穿，大大提高了二极管的成品率及使用可靠性。
所述N+区扩散5端部均匀地设有一层金属化铝8。便于使烧焊时管芯1背面形成N+区扩散5层，同时提高电极与管芯1之间的电耦合性。
所述P+突变结2为铝片4在P区缓变面上烧焊扩散形成。P+突变结2与管芯1、铝片4的结合性好，且与电极引线6的电耦合性好。
所述电极引线6包括铜引线9、钼柱11，钼柱11一端与管芯1连接，另一端与铜引线9连接，钼柱11侧面被包覆于钝化玻璃7内，铜引线9伸出钝化玻璃7。结构简单，铜引线9与外部器件的连接方便，钼柱11与管芯1充分接触，电流通过率大，能够适应大功率器件。
所述铜引线9与钼柱11之间通过银铜焊片10角焊缝焊接。焊缝连接面大，电耦合性好，且强度大，提高了使用性能和耐用性。
位于管芯1正面的钼柱11与铝片4连接，铝片4周围为钝化玻璃7。使得电流优先经过P+突变结2，进一步降低台面击穿的几率，提高成品率和可靠性。
所述铝片4为铝:硅＝3:97，厚度5～100μm的铝。
本发明还提供了上述体内击穿玻钝二极管的制造方法，包括如下步骤：
步骤一、单晶片，选择电阻率为0.005Ω·cm～500Ω·cm的N型单晶硅，进行磨片处理；
步骤二、磷硼扩散，得到N型扩散的硅片，磷面结深为30μm，方块电阻≤3Ω/□，硼面结深为25μm，方块电阻≤5Ω/□；
步骤三、喷砂，用压缩空气携带金刚砂去除硼扩散面形成的硼硅玻璃层；
步骤四、蒸铝与合金，在保留的磷扩散面蒸铝，细磨面不蒸铝，铝层厚度为6～16μm，蒸铝后在高温下进行合金处理；
步骤五、裂片，裂片后用HF：HNO3＝1：5(体积比)的腐蚀剂腐蚀80～180S，腐蚀后用大量冷去离子水冲洗，酒精脱水烘干；
步骤六、装模，在管芯1的P面中部装配铝片4，然后将电极引线6装配在管芯1两端，装配后在高温下进行烧结处理；(装模后如图2所示，图中该步骤还未形成P+突变结2，正面为P区，反面为N+区扩散5。)
步骤七、放入腐蚀剂中进行台面腐蚀，腐蚀后用热去离子水冲洗，并用热去离子水煮沸5次，用热、冷去离子水交叉冲洗半小时以上，然后放入钝化液中钝化处理；
步骤八、将产品包覆于玻璃粉中，然后高温成型，在20～70min升温到650℃，保持1～8min，然后以速率≤3℃/min降温，整形后得到产品。(包覆后如图2所示。)
所述步骤一的磨片处理为，从一面磨片至300μm。
所述步骤二、磷硼扩散为，在温度1100-1280℃下扩散30h。
所述步骤三的金刚砂代表规格为302#、303#，压缩空气气压为100～500kPa。
所述步骤四的合金处理，是在温度450～550℃下恒温8min合金。
所述步骤六的铝片4成分为硅:铝＝3:97，厚度为50～100μm。在裂片为φ1.5mm的情况下，铝片4大小为φ1mm。
所述步骤六的烧结工艺为，真空度≥0.0034Pa，恒温温度为660～850℃，恒温时间为10min，升温速率为5～25℃/min，降温速率≤3℃/min，降温至100℃以下取出产品。
所述步骤七的腐蚀剂为2～12％KOH溶液，腐蚀温度：80～100℃，腐蚀时间2～25min；钝化液为质量百分比≥30％双氧水、≥85％双氧水和离子水按1:1:1.3混合的混合液，钝化温度为55～60℃；钝化时间1～10min。
实施例一(800V/0.25A整流二极管)
所述步骤一中，选择电阻率为15Ω·cm～20Ω·cm的N型单晶硅。
实施例二(5V/1W稳压二极管)
所述步骤一中，选择电阻率为0.005Ω·cm～0.006Ω·cm的N型单晶硅。
实施例三(800V/1A整流二极管)
所述步骤一中，选择电阻率为15Ω·cm～20Ω·cm的N型单晶硅。
Claims (10)
1.一种体内击穿玻钝二极管，其特征在于：包括管芯(1)、电极引线(6)，所述电极引线(6)设于管芯(1)的两端，管芯(1)与电极引线(6)的外周包覆有钝化玻璃(7)，管芯(1)两端的电极引线(6)分别伸出钝化玻璃(7)；所述管芯(1)的正面中部为P+突变结(2)，围绕P+突变结(2)设有一圈P区缓变结(3)，P+突变结(2)的端面设有铝片(4)，管芯(1)的背面为N+区扩散(5)。
2.如权利要求1所述的体内击穿玻钝二极管，其特征在于：所述N+区扩散(5)端部均匀地设有一层金属化铝(8)。
3.如权利要求1所述的体内击穿玻钝二极管，其特征在于：所述P+突变结(2)为铝片(4)在P区缓变面上烧焊扩散形成。
4.如权利要求1所述的体内击穿玻钝二极管，其特征在于：所述电极引线(6)包括铜引线(9)、钼柱(11)，钼柱(11)一端与管芯(1)连接，另一端与铜引线(9)连接，钼柱(11)侧面被包覆于钝化玻璃(7)内，铜引线(9)伸出钝化玻璃(7)。
5.如权利要求4所述的体内击穿玻钝二极管，其特征在于：所述铜引线(9)与钼柱(11)之间通过银铜焊片(10)角焊缝焊接。
6.如权利要求4所述的体内击穿玻钝二极管，其特征在于：位于管芯(1)正面的钼柱(11)与铝片(4)连接，铝片(4)周围为钝化玻璃(7)。
7.如权利要求1～6中任一项所述的体内击穿玻钝二极管的制造方法，其特征在于：包括如下步骤，
步骤一、单晶片，选择电阻率为0.005Ω·cm～500Ω·cm的N型单晶硅，进行磨片处理；
步骤二、磷硼扩散，得到N型扩散的硅片，磷面结深为30μm，方块电阻≤3Ω/□，硼面结深为25μm，方块电阻≤5Ω/□；
步骤三、喷砂，用压缩空气携带金刚砂去除硼扩散面形成的硼硅玻璃层；
步骤四、蒸铝与合金，在保留的磷扩散面蒸铝，细磨面不蒸铝，铝层厚度为6～16μm，蒸铝后在高温下进行合金处理；
步骤五、裂片，裂片后用HF：HNO3＝1：5体积比的腐蚀剂腐蚀80～180S，腐蚀后用大量冷去离子水冲洗，酒精脱水烘干；
步骤六、装模，在管芯(1)的P面中部装配铝片(4)，然后将电极引线(6)装配在管芯(1)两端，装配后在高温下进行烧结处理；
步骤七、放入腐蚀剂中进行台面腐蚀，腐蚀后用热去离子水冲洗，并用热去离子水煮沸5次，用热、冷去离子水交叉冲洗半小时以上，然后放入钝化液中钝化处理；
步骤八、将产品包覆于玻璃粉中，然后高温成型，在20～70min升温到650℃，保持1～8min，然后以速率≤3℃/min降温，整形后得到产品。
8.如权利要求7所述的制造方法，其特征在于：所述步骤六的铝片4成分为硅:铝＝3:97，厚度为50～100μm。
9.如权利要求7所述的制造方法，其特征在于：所述步骤六的烧结工艺为，真空度≥0.0034Pa，恒温温度为660～850℃，恒温时间为10min，升温速率为5～25℃/min，降温速率≤3℃/min，降温至100℃以下取出产品。
10.如权利要求7所述的制造方法，其特征在于：所述步骤七的腐蚀剂为2～12％KOH溶液，腐蚀温度：80～100℃，腐蚀时间2～25min。
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