GB1314923A - Method of manufacturing an insulated gate type field effect device - Google Patents

Method of manufacturing an insulated gate type field effect device

Info

Publication number
GB1314923A
GB1314923A GB2779271A GB2779271A GB1314923A GB 1314923 A GB1314923 A GB 1314923A GB 2779271 A GB2779271 A GB 2779271A GB 2779271 A GB2779271 A GB 2779271A GB 1314923 A GB1314923 A GB 1314923A
Authority
GB
United Kingdom
Prior art keywords
oxide layer
regions
manufacturing
field effect
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2779271A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1314923A publication Critical patent/GB1314923A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
GB2779271A 1970-06-15 1971-06-14 Method of manufacturing an insulated gate type field effect device Expired GB1314923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5100170 1970-06-15

Publications (1)

Publication Number Publication Date
GB1314923A true GB1314923A (en) 1973-04-26

Family

ID=12874527

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2779271A Expired GB1314923A (en) 1970-06-15 1971-06-14 Method of manufacturing an insulated gate type field effect device

Country Status (3)

Country Link
DE (1) DE2128470A1 (https=)
FR (1) FR2095259B1 (https=)
GB (1) GB1314923A (https=)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Also Published As

Publication number Publication date
DE2128470A1 (de) 1972-01-20
FR2095259A1 (https=) 1972-02-11
FR2095259B1 (https=) 1975-07-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees