GB1313003A - Manufacture of semiconductor structures - Google Patents
Manufacture of semiconductor structuresInfo
- Publication number
- GB1313003A GB1313003A GB2976570A GB2976570A GB1313003A GB 1313003 A GB1313003 A GB 1313003A GB 2976570 A GB2976570 A GB 2976570A GB 2976570 A GB2976570 A GB 2976570A GB 1313003 A GB1313003 A GB 1313003A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- lines
- semi
- conductor
- division
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691931245 DE1931245A1 (de) | 1969-06-20 | 1969-06-20 | Verfahren zum Zerteilen von mit Halbleitermaterial beschichteten und mit Bauelementen versehenen Mg-Al-Spinellsubstratscheiben |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1313003A true GB1313003A (en) | 1973-04-11 |
Family
ID=5737496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2976570A Expired GB1313003A (en) | 1969-06-20 | 1970-06-19 | Manufacture of semiconductor structures |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4827491B1 (de) |
AT (1) | AT317301B (de) |
CH (1) | CH507589A (de) |
DE (1) | DE1931245A1 (de) |
FR (1) | FR2046933B1 (de) |
GB (1) | GB1313003A (de) |
NL (1) | NL7006367A (de) |
SE (1) | SE351522B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2648274B1 (fr) * | 1989-06-07 | 1994-07-29 | Commissariat Energie Atomique | Procede et dispositif de marquage et de clivage de plaquettes de materiaux semi-conducteurs monocristallins |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3169837A (en) * | 1963-07-31 | 1965-02-16 | Int Rectifier Corp | Method of dicing semiconductor wafers |
BE668918A (de) * | 1965-08-27 | 1900-01-01 | ||
DE1652512B2 (de) * | 1967-05-29 | 1976-08-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleiterbauelementen |
-
1969
- 1969-06-20 DE DE19691931245 patent/DE1931245A1/de active Pending
-
1970
- 1970-04-29 NL NL7006367A patent/NL7006367A/xx unknown
- 1970-06-08 FR FR7020961A patent/FR2046933B1/fr not_active Expired
- 1970-06-15 CH CH897870A patent/CH507589A/de not_active IP Right Cessation
- 1970-06-18 AT AT549370A patent/AT317301B/de not_active IP Right Cessation
- 1970-06-19 JP JP5291270A patent/JPS4827491B1/ja active Pending
- 1970-06-19 GB GB2976570A patent/GB1313003A/en not_active Expired
- 1970-06-22 SE SE861070A patent/SE351522B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AT317301B (de) | 1974-08-26 |
DE1931245A1 (de) | 1971-07-08 |
SE351522B (de) | 1972-11-27 |
FR2046933B1 (de) | 1974-09-20 |
CH507589A (de) | 1971-05-15 |
FR2046933A1 (de) | 1971-03-12 |
NL7006367A (de) | 1970-12-22 |
JPS4827491B1 (de) | 1973-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |