GB1311048A - Methods of treating semiconductors - Google Patents
Methods of treating semiconductorsInfo
- Publication number
- GB1311048A GB1311048A GB1375671*[A GB1375671A GB1311048A GB 1311048 A GB1311048 A GB 1311048A GB 1375671 A GB1375671 A GB 1375671A GB 1311048 A GB1311048 A GB 1311048A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- semiconductor
- alloys
- encapsulant
- boric oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 5
- 229910011255 B2O3 Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 3
- 239000008393 encapsulating agent Substances 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000807 Ga alloy Inorganic materials 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- ZXQKSCQCQBPHOZ-UHFFFAOYSA-N boron;platinum Chemical compound [Pt]#B ZXQKSCQCQBPHOZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3636770A | 1970-05-11 | 1970-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1311048A true GB1311048A (en) | 1973-03-21 |
Family
ID=21888223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1375671*[A Expired GB1311048A (en) | 1970-05-11 | 1971-05-07 | Methods of treating semiconductors |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3647389A (enrdf_load_stackoverflow) |
| JP (1) | JPS5026422B1 (enrdf_load_stackoverflow) |
| BE (1) | BE766750A (enrdf_load_stackoverflow) |
| CA (1) | CA952413A (enrdf_load_stackoverflow) |
| CH (1) | CH569514A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2122192C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2088484B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1311048A (enrdf_load_stackoverflow) |
| IT (1) | IT942100B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4637854A (en) * | 1983-01-18 | 1987-01-20 | Agency Of Industrial Science And Technology | Method for producing GaAs single crystal |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
| US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
| JPS6024078B2 (ja) * | 1977-09-05 | 1985-06-11 | 株式会社東芝 | ３−５族化合物半導体単結晶の製造装置 |
| US4277303A (en) * | 1978-08-07 | 1981-07-07 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot and method for growing the ingot |
| US4299650A (en) * | 1979-10-12 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Minimization of strain in single crystals |
| US4431476A (en) * | 1981-01-17 | 1984-02-14 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing gallium phosphide single crystals |
| JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | ＣａＡｓ単結晶への硼素のド−ピング方法 |
| US4426237A (en) | 1981-10-13 | 1984-01-17 | International Business Machines Corporation | Volatile metal oxide suppression in molecular beam epitaxy systems |
| JPS59232995A (ja) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | 引上単結晶の冷却方法 |
| DE3472577D1 (en) * | 1983-08-31 | 1988-08-11 | Japan Res Dev Corp | Apparatus for growing single crystals of dissociative compounds |
| US4721539A (en) * | 1986-07-15 | 1988-01-26 | The United States Of America As Represented By The United States Department Of Energy | Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
| US4824520A (en) * | 1987-03-19 | 1989-04-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid encapsulated crystal growth |
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
| US5183767A (en) * | 1991-02-14 | 1993-02-02 | International Business Machines Corporation | Method for internal gettering of oxygen in iii-v compound semiconductors |
| US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
| KR20110093856A (ko) * | 2008-11-07 | 2011-08-18 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Ⅲ족 질화물 결정들의 암모노열 성장 동안의 보론-함유 화합물들, 가스들 및 유체들의 사용 |
| RU2400574C1 (ru) * | 2009-04-10 | 2010-09-27 | Общество с ограниченной ответственностью (ООО) "ЮниСаф-Малахит" | Способ получения монокристаллов a3b5 |
-
1970
- 1970-05-11 US US36367A patent/US3647389A/en not_active Expired - Lifetime
-
1971
- 1971-01-15 CA CA102,847A patent/CA952413A/en not_active Expired
- 1971-05-05 BE BE766750A patent/BE766750A/xx unknown
- 1971-05-05 DE DE2122192A patent/DE2122192C3/de not_active Expired
- 1971-05-07 GB GB1375671*[A patent/GB1311048A/en not_active Expired
- 1971-05-10 FR FR7116785A patent/FR2088484B1/fr not_active Expired
- 1971-05-11 CH CH689971A patent/CH569514A5/xx not_active IP Right Cessation
- 1971-05-11 IT IT50249/71A patent/IT942100B/it active
- 1971-05-11 JP JP46030887A patent/JPS5026422B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4637854A (en) * | 1983-01-18 | 1987-01-20 | Agency Of Industrial Science And Technology | Method for producing GaAs single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| US3647389A (en) | 1972-03-07 |
| FR2088484A1 (enrdf_load_stackoverflow) | 1972-01-07 |
| JPS5026422B1 (enrdf_load_stackoverflow) | 1975-09-01 |
| FR2088484B1 (enrdf_load_stackoverflow) | 1976-04-16 |
| IT942100B (it) | 1973-03-20 |
| CH569514A5 (enrdf_load_stackoverflow) | 1975-11-28 |
| BE766750A (fr) | 1971-10-01 |
| DE2122192A1 (de) | 1971-11-25 |
| DE2122192B2 (de) | 1973-10-18 |
| CA952413A (en) | 1974-08-06 |
| DE2122192C3 (de) | 1974-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1311048A (en) | Methods of treating semiconductors | |
| US2957789A (en) | Semiconductor devices and methods of preparing the same | |
| GB1243930A (en) | Improvements in or relating to the production of monocrystals | |
| GB1286024A (en) | Method of producing single semiconductor crystals | |
| GB1178765A (en) | Improvements in or relating to the Processing of Semiconductor Bodies | |
| US2921905A (en) | Method of preparing material for semiconductor applications | |
| US2725316A (en) | Method of preparing pn junctions in semiconductors | |
| NL279828A (enrdf_load_stackoverflow) | ||
| Bkadshaw et al. | XIII. The Evaporation of Impurities from Silicon | |
| GB1229508A (enrdf_load_stackoverflow) | ||
| GB1397684A (en) | Diffusion of impurity into semiconductor material | |
| GB1049504A (en) | Improvements in processes for the preparation of the mononitrides of the rare earth metals and of yttrium | |
| US2850412A (en) | Process for producing germaniumindium alloyed junctions | |
| GB1152415A (en) | Improvements in or relating to the processing of semiconductor materials | |
| GB1255576A (en) | Improvements in or relating to the production of epitaxially grown layers of semiconductor material | |
| GB1258226A (enrdf_load_stackoverflow) | ||
| GB1228406A (enrdf_load_stackoverflow) | ||
| GB1212366A (en) | Improvements in doping semi-conductor bodies | |
| US3353912A (en) | Preparation of high-purity materials | |
| GB979554A (en) | A method of diffusing a conductivity-affecting impurity into a semiconductor compound | |
| GB1326965A (en) | Method of eliminating effects of impurities in carbon bodies | |
| GB1014500A (en) | Purifying semi-conductor materials | |
| US3671330A (en) | Removal of acceptor impurities from high purity germanium | |
| GB1202113A (en) | Improvements in or relating to the manufacture of monocrystals of semiconductor compounds | |
| GB1249404A (en) | Sintered molybdenum-boron alloys |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |