GB1297315A - - Google Patents
Info
- Publication number
- GB1297315A GB1297315A GB1297315DA GB1297315A GB 1297315 A GB1297315 A GB 1297315A GB 1297315D A GB1297315D A GB 1297315DA GB 1297315 A GB1297315 A GB 1297315A
- Authority
- GB
- United Kingdom
- Prior art keywords
- melt
- substance
- substrate
- layer
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1297315 Epitaxial growth LICENTIA PATENT-VERWALTUNGS GmbH 9 Sept 1970 [11 Sept 1969] 43180/70 Heading B1S A method of producing epitaxial growth comprises the steps of:- (1) brining a melt from which an epitaxial growth layer is to be precipitated into contact with an excess of the substance from which the layer is to be made and simultaneously heating the melt until a saturated solution of the said substance in the melt is produced (2) separating the saturated melt from the supply of the said substance and bringing it into contact with the substrate on which the epitaxial layer is to be produced, (3) cooling the melt continuously in order to deposit a layer of the said substance on to the substrate, and then separating the melt from the substrate. Two embodiments of apparatus suitable for performing the process of the invention are disclosed, one being illustrated in Figs. 1-5. In Fig. I the melt is introduced into the compartment 1.3 and the substance to be precipitated is introduced into the same compartment via screw stopper 1.6. The substrate 1.7 is wedged in the recess 1.3. When the melt and layer-forming substance have been introduced they are heated as in Fig. 2, the apparatus is then invented as in Fig. 3 to remove the melt from the substance, the melt can now be heated to raise the temperature by a further 5 to 10‹C. The melt is then transferred by means of rod 4.8 to the position shown in Fig. 4. The melt may be maintained at the elevated temperature for a short while to allow removal of some of the substrate surface by thermal etching. The melt is then cooled and an epitaxial layer is formed on the substrate. the melt and substrate may then be separated by inversion of the apparatus as in Fig. 5 and the process repeated if required. In the embodiment described the melt is gallium and the epitaxial layer composed of gallium arsenide. The other embodiment described operates in a similar fashion, contact and separation being achieved, however, by rotation of a G-shaped crucible.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691946049 DE1946049C3 (en) | 1969-09-11 | 1969-09-11 | Method and device for liquid phase epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1297315A true GB1297315A (en) | 1972-11-22 |
Family
ID=5745230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1297315D Expired GB1297315A (en) | 1969-09-11 | 1970-09-09 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JPS5010551B1 (en) |
DE (1) | DE1946049C3 (en) |
FR (1) | FR2061207A5 (en) |
GB (1) | GB1297315A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
BE788374A (en) * | 1971-12-08 | 1973-01-02 | Rca Corp | PROCESS FOR DEPOSITING AN EPITAXIAL LAYER OF A SEMICONDUCTOR MATERIAL ON THE SURFACE OF A SUBSTRATE |
-
1969
- 1969-09-11 DE DE19691946049 patent/DE1946049C3/en not_active Expired
-
1970
- 1970-09-09 FR FR7032799A patent/FR2061207A5/fr not_active Expired
- 1970-09-09 GB GB1297315D patent/GB1297315A/en not_active Expired
- 1970-09-11 JP JP7993070A patent/JPS5010551B1/ja active Pending
-
1974
- 1974-01-04 JP JP454874A patent/JPS5228107B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5010551B1 (en) | 1975-04-22 |
DE1946049B2 (en) | 1978-06-08 |
DE1946049A1 (en) | 1971-03-18 |
JPS5228107B1 (en) | 1977-07-25 |
DE1946049C3 (en) | 1979-02-08 |
FR2061207A5 (en) | 1971-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |