GB1297315A - - Google Patents

Info

Publication number
GB1297315A
GB1297315A GB1297315DA GB1297315A GB 1297315 A GB1297315 A GB 1297315A GB 1297315D A GB1297315D A GB 1297315DA GB 1297315 A GB1297315 A GB 1297315A
Authority
GB
United Kingdom
Prior art keywords
melt
substance
substrate
layer
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1297315A publication Critical patent/GB1297315A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1297315 Epitaxial growth LICENTIA PATENT-VERWALTUNGS GmbH 9 Sept 1970 [11 Sept 1969] 43180/70 Heading B1S A method of producing epitaxial growth comprises the steps of:- (1) brining a melt from which an epitaxial growth layer is to be precipitated into contact with an excess of the substance from which the layer is to be made and simultaneously heating the melt until a saturated solution of the said substance in the melt is produced (2) separating the saturated melt from the supply of the said substance and bringing it into contact with the substrate on which the epitaxial layer is to be produced, (3) cooling the melt continuously in order to deposit a layer of the said substance on to the substrate, and then separating the melt from the substrate. Two embodiments of apparatus suitable for performing the process of the invention are disclosed, one being illustrated in Figs. 1-5. In Fig. I the melt is introduced into the compartment 1.3 and the substance to be precipitated is introduced into the same compartment via screw stopper 1.6. The substrate 1.7 is wedged in the recess 1.3. When the melt and layer-forming substance have been introduced they are heated as in Fig. 2, the apparatus is then invented as in Fig. 3 to remove the melt from the substance, the melt can now be heated to raise the temperature by a further 5 to 10‹C. The melt is then transferred by means of rod 4.8 to the position shown in Fig. 4. The melt may be maintained at the elevated temperature for a short while to allow removal of some of the substrate surface by thermal etching. The melt is then cooled and an epitaxial layer is formed on the substrate. the melt and substrate may then be separated by inversion of the apparatus as in Fig. 5 and the process repeated if required. In the embodiment described the melt is gallium and the epitaxial layer composed of gallium arsenide. The other embodiment described operates in a similar fashion, contact and separation being achieved, however, by rotation of a G-shaped crucible.
GB1297315D 1969-09-11 1970-09-09 Expired GB1297315A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691946049 DE1946049C3 (en) 1969-09-11 1969-09-11 Method and device for liquid phase epitaxy

Publications (1)

Publication Number Publication Date
GB1297315A true GB1297315A (en) 1972-11-22

Family

ID=5745230

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297315D Expired GB1297315A (en) 1969-09-11 1970-09-09

Country Status (4)

Country Link
JP (2) JPS5010551B1 (en)
DE (1) DE1946049C3 (en)
FR (1) FR2061207A5 (en)
GB (1) GB1297315A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
BE788374A (en) * 1971-12-08 1973-01-02 Rca Corp PROCESS FOR DEPOSITING AN EPITAXIAL LAYER OF A SEMICONDUCTOR MATERIAL ON THE SURFACE OF A SUBSTRATE

Also Published As

Publication number Publication date
DE1946049B2 (en) 1978-06-08
DE1946049A1 (en) 1971-03-18
JPS5010551B1 (en) 1975-04-22
DE1946049C3 (en) 1979-02-08
FR2061207A5 (en) 1971-06-18
JPS5228107B1 (en) 1977-07-25

Similar Documents

Publication Publication Date Title
US2739088A (en) Process for controlling solute segregation by zone-melting
GB1283793A (en) Depositing successive epitaxial semiconductive layers from the liquid phase
GB1344437A (en) Apparatus for the liquid-phase epitaxial growth of multilayer wafers
GB1371537A (en) Method of depositing an epitaxial semi-conductor layer from the liquid phase
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
ES275957A1 (en) Method and apparatus for the production of flat glass in the form of tape (Machine-translation by Google Translate, not legally binding)
GB1172833A (en) Concentration Process for Beer and Vinegar.
GB1277787A (en) Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
GB1297315A (en)
US3650822A (en) Method of producing epitactic semiconductor layers on foreign substrates
GB1468106A (en) Method and apparatus for crystal growth
GB1344633A (en) Method for treating and transferring articles of hosiery or other articles of apparel
US2198617A (en) Process for drying glue
GB1203441A (en) Improvements in and relating to treatment of surfaces
SU198882A1 (en) Method for removing unsuitable enamel coating from metal surfaces
GB1373673A (en) Method of forming an epitaxial semiconductor layer with smooth surface
EP0056737A3 (en) Method of manufacturing a semiconductor device using molecular beam epitaxy
JPS5650520A (en) Processing method of semiconductor substrate
GB1451379A (en) Apparatus for producing a semiconductor device utilizing successive liquid growth
JPS5393788A (en) Production of semiconductor device
FR2137160A1 (en) Monocrystalline semiconductor substrate prodn - with low specific resistance
GB1493825A (en) Semiconductors
JPS5248479A (en) Semiconductor device and process for production of the same
JPS5659696A (en) Liquid phase epitaxial growing apparatus
JPS5231665A (en) Growing method of semiconductor crystal

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees