GB753160A - Method of making p-n crystals of germanium or silicon semiconductors - Google Patents

Method of making p-n crystals of germanium or silicon semiconductors

Info

Publication number
GB753160A
GB753160A GB8926/54A GB892654A GB753160A GB 753160 A GB753160 A GB 753160A GB 8926/54 A GB8926/54 A GB 8926/54A GB 892654 A GB892654 A GB 892654A GB 753160 A GB753160 A GB 753160A
Authority
GB
United Kingdom
Prior art keywords
crystal
copper
germanium
withdrawn
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8926/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STANDARD TELEPHCNES AND GABLES
Original Assignee
STANDARD TELEPHCNES AND GABLES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STANDARD TELEPHCNES AND GABLES filed Critical STANDARD TELEPHCNES AND GABLES
Publication of GB753160A publication Critical patent/GB753160A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

753,160. Coating by vapour deposition. STANDARD TELEPHONES & CABLES, Ltd. March 26, 1954 [April 2, 1953], No. 8926/54. Class 82(2). [Also in Group XXXVI] A portion of an N-type germanium or silicon crystal is converted to P-type conductivity by depositing copper or nickel on the surface of the crystal as this is withdrawn from an N-type molten mass. The deposition occurs near the surface of the melt so that the P-type conductivity induced by the diffusion of the copper or nickel, is retained by the subsequent rapid cooling of the withdrawn crystal. Copper and nickel in germanium or silicon have high segregation coefficients, so that in the absence of the rapid cooling, these impurities would be expelled from the semiconductor as this freezes, and the converted portion of the material would then return to N-type conductivity. Fig. 1 shows a crystal 1 being withdrawn from a melt 2 of N-type germanium. A copper ring 3 heated for example by eddy currents, is arranged above the surface of the melt so that copper is diffused into the germanium. The depth of penetration may be controlled by adjusting the rate of crystal withdrawal, the position of the ring, and the duration of heating the ring. Alternatively, the crystal may be withdrawn in the form of a plate by means of rollers which may be heated, a heated copper or nickel wire being arranged close to the plate. The wire may have V-shaped sections separated by a screen so that small isolated regions of P-type conductivity are produced. Specification 753,133 [Group XXXVI] is referred to.
GB8926/54A 1953-04-02 1954-03-26 Method of making p-n crystals of germanium or silicon semiconductors Expired GB753160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE753160X 1953-04-02

Publications (1)

Publication Number Publication Date
GB753160A true GB753160A (en) 1956-07-18

Family

ID=6656321

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8926/54A Expired GB753160A (en) 1953-04-02 1954-03-26 Method of making p-n crystals of germanium or silicon semiconductors

Country Status (1)

Country Link
GB (1) GB753160A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
DE1133470B (en) * 1957-12-27 1962-07-19 Int Standard Electric Corp Process for producing pn junctions in long semiconductor crystals, especially in wire form, for semiconductor components by diffusing in gaseous doping foreign substances

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
DE1133470B (en) * 1957-12-27 1962-07-19 Int Standard Electric Corp Process for producing pn junctions in long semiconductor crystals, especially in wire form, for semiconductor components by diffusing in gaseous doping foreign substances

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