JPS5010551B1 - - Google Patents
Info
- Publication number
- JPS5010551B1 JPS5010551B1 JP7993070A JP7993070A JPS5010551B1 JP S5010551 B1 JPS5010551 B1 JP S5010551B1 JP 7993070 A JP7993070 A JP 7993070A JP 7993070 A JP7993070 A JP 7993070A JP S5010551 B1 JPS5010551 B1 JP S5010551B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691946049 DE1946049C3 (de) | 1969-09-11 | 1969-09-11 | Verfahren und Vorrichtung zur Flüssigphasenepitaxie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5010551B1 true JPS5010551B1 (ja) | 1975-04-22 |
Family
ID=5745230
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7993070A Pending JPS5010551B1 (ja) | 1969-09-11 | 1970-09-11 | |
| JP454874A Pending JPS5228107B1 (ja) | 1969-09-11 | 1974-01-04 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP454874A Pending JPS5228107B1 (ja) | 1969-09-11 | 1974-01-04 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JPS5010551B1 (ja) |
| DE (1) | DE1946049C3 (ja) |
| FR (1) | FR2061207A5 (ja) |
| GB (1) | GB1297315A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
| BE788374A (fr) * | 1971-12-08 | 1973-01-02 | Rca Corp | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat |
-
1969
- 1969-09-11 DE DE19691946049 patent/DE1946049C3/de not_active Expired
-
1970
- 1970-09-09 FR FR7032799A patent/FR2061207A5/fr not_active Expired
- 1970-09-09 GB GB1297315D patent/GB1297315A/en not_active Expired
- 1970-09-11 JP JP7993070A patent/JPS5010551B1/ja active Pending
-
1974
- 1974-01-04 JP JP454874A patent/JPS5228107B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1946049A1 (de) | 1971-03-18 |
| DE1946049B2 (de) | 1978-06-08 |
| JPS5228107B1 (ja) | 1977-07-25 |
| FR2061207A5 (ja) | 1971-06-18 |
| DE1946049C3 (de) | 1979-02-08 |
| GB1297315A (ja) | 1972-11-22 |