FR2036831A1 - Reconstituting matter from ionised vapour - state - Google Patents

Reconstituting matter from ionised vapour - state

Info

Publication number
FR2036831A1
FR2036831A1 FR6910602A FR6910602A FR2036831A1 FR 2036831 A1 FR2036831 A1 FR 2036831A1 FR 6910602 A FR6910602 A FR 6910602A FR 6910602 A FR6910602 A FR 6910602A FR 2036831 A1 FR2036831 A1 FR 2036831A1
Authority
FR
France
Prior art keywords
raw material
reconstituting
matter
state
ionised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6910602A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ISOFILM INTERNATIONAL
Original Assignee
ISOFILM INTERNATIONAL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19691917406 priority Critical patent/DE1917406A1/en
Application filed by ISOFILM INTERNATIONAL filed Critical ISOFILM INTERNATIONAL
Priority to FR6910602A priority patent/FR2036831A1/en
Priority to NL6905343A priority patent/NL6905343A/xx
Publication of FR2036831A1 publication Critical patent/FR2036831A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)

Abstract

Reconstitution to a solid state, occurs as a coherent dense and implanted atomic layer of the raw material on the surface of a substrate. A magnetic field is made whose magnetic flux lines extend over the substrate surface and the molten raw material. Ions are formed from the molten material for precipitation on the substrate surface and the coherent solid atomic layer is formed under the continuous effect of the magnetic field which has been adapted to control the deposition direction of the ionised raw material.
FR6910602A 1969-04-03 1969-04-04 Reconstituting matter from ionised vapour - state Withdrawn FR2036831A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19691917406 DE1917406A1 (en) 1969-04-03 1969-04-03 Process and device for material vapor deposition
FR6910602A FR2036831A1 (en) 1969-04-03 1969-04-04 Reconstituting matter from ionised vapour - state
NL6905343A NL6905343A (en) 1969-04-03 1969-04-04

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19691917406 DE1917406A1 (en) 1969-04-03 1969-04-03 Process and device for material vapor deposition
FR6910602A FR2036831A1 (en) 1969-04-03 1969-04-04 Reconstituting matter from ionised vapour - state
NL6905343A NL6905343A (en) 1969-04-03 1969-04-04

Publications (1)

Publication Number Publication Date
FR2036831A1 true FR2036831A1 (en) 1970-12-31

Family

ID=27181879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6910602A Withdrawn FR2036831A1 (en) 1969-04-03 1969-04-04 Reconstituting matter from ionised vapour - state

Country Status (3)

Country Link
DE (1) DE1917406A1 (en)
FR (1) FR2036831A1 (en)
NL (1) NL6905343A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
FR2544746A1 (en) * 1983-04-22 1984-10-26 White Eng Corp PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
FR2544746A1 (en) * 1983-04-22 1984-10-26 White Eng Corp PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS

Also Published As

Publication number Publication date
DE1917406A1 (en) 1970-10-15
NL6905343A (en) 1970-10-06

Similar Documents

Publication Publication Date Title
CA932626A (en) Composite method for growth of iib-via compounds on substrates, and process for making composition for the compounds
CA921370A (en) Apparatus for the epitaxial deposition of semiconductor material
FR2036831A1 (en) Reconstituting matter from ionised vapour - state
CA918986A (en) Technique for the deposition of a ceramic substrate glaze
CA1023849A (en) Skew controlled readback systems
CA1003190A (en) Method for the purification of selenium by precipitation from a melt
CA957940A (en) Method for controlling and inhibiting the formation and growth of slime in industrial water systems
ZA707802B (en) Process for the production of extremely fine granular metallic surface structures
CA937724A (en) Method for treating surface of shaped articles of thermoplastic resins
JPS5258363A (en) Formation of semiconductor layer
JPS5435176A (en) Depositing method by vacuum evaporation
AU448603B2 (en) Process for controlling the thickness ofa thin layer of semiconductor material and semiconductor substrate
JPS5223265A (en) Method of processing semiconductor materials
CA974155A (en) Method for forming a carbide layer on the surface of an iron or ferrous alloy article
AU415031B2 (en) Method of forming plated metallic patterns ona substrate
CA775783A (en) Processes for the production of ribbon-shaped dendrites of semi-conductor material
AU6268869A (en) Process for controlling the thickness ofa thin layer of semiconductor material and semiconductor substrate
AU451264B2 (en) Method for forming a conductive layer ona nonconductive substrate
CA913474A (en) Vapor deposition of selenium on substrate carrying thermoplastic layer
GB1392358A (en) Manufacture of catalytic members
AU1687370A (en) Method for forming a conductive layer ona nonconductive substrate
CA867377A (en) Processes for the production of bis (4-hydroxyphenyl)-(pyridyl-2)-methane-bis (hydrogensulfate) and the salts thereof
CA956763A (en) Method for manufacturing shaped plant substrate blocks
AU448938B2 (en) Process and apparatus for coating fertilizer or like granules witha thin dense layer
CA781844A (en) Method and composition for autocatalytically depositing copper

Legal Events

Date Code Title Description
ST Notification of lapse