GB1292060A - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
GB1292060A
GB1292060A GB07585/70A GB1758570A GB1292060A GB 1292060 A GB1292060 A GB 1292060A GB 07585/70 A GB07585/70 A GB 07585/70A GB 1758570 A GB1758570 A GB 1758570A GB 1292060 A GB1292060 A GB 1292060A
Authority
GB
United Kingdom
Prior art keywords
layer
etching
coated
layers
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB07585/70A
Other languages
English (en)
Inventor
Toshio Abe
Kanro Sato
Toshiro Sakamoto
Ayao Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2861969A external-priority patent/JPS5231711B1/ja
Priority claimed from JP2895769A external-priority patent/JPS4824355B1/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1292060A publication Critical patent/GB1292060A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
GB07585/70A 1969-04-15 1970-04-14 A method of manufacturing a semiconductor device Expired GB1292060A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2861969A JPS5231711B1 (enExample) 1969-04-15 1969-04-15
JP2895769A JPS4824355B1 (enExample) 1969-04-16 1969-04-16

Publications (1)

Publication Number Publication Date
GB1292060A true GB1292060A (en) 1972-10-11

Family

ID=26366757

Family Applications (1)

Application Number Title Priority Date Filing Date
GB07585/70A Expired GB1292060A (en) 1969-04-15 1970-04-14 A method of manufacturing a semiconductor device

Country Status (3)

Country Link
DE (1) DE2018027A1 (enExample)
GB (1) GB1292060A (enExample)
NL (1) NL7005296A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000190A (en) * 1977-06-14 1979-01-04 Sony Corp Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched
GB2202236A (en) * 1987-03-09 1988-09-21 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1543845A (en) * 1975-05-27 1979-04-11 Fairchild Camera Instr Co Production of a narrow opening to a surface of a material
US4053349A (en) * 1976-02-02 1977-10-11 Intel Corporation Method for forming a narrow gap
IT1089299B (it) * 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
FR2460037A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000190A (en) * 1977-06-14 1979-01-04 Sony Corp Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched
GB2000190B (en) * 1977-06-14 1982-03-17 Sony Corp Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched
GB2202236A (en) * 1987-03-09 1988-09-21 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition
GB2202236B (en) * 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride

Also Published As

Publication number Publication date
DE2018027A1 (de) 1970-10-22
NL7005296A (enExample) 1970-10-19

Similar Documents

Publication Publication Date Title
GB1319682A (en) Thin film metallization process for microcircuits
US3920861A (en) Method of making a semiconductor device
ES348302A1 (es) Un metodo para fabricar un circuito integrado de semicon- ductor de tipo monolitico.
JPS62500414A (ja) ３−ｖ及び２−６族化合物半導体の被覆
US4270136A (en) MIS Device having a metal and insulating layer containing at least one cation-trapping element
US3566518A (en) Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films
JPS5599722A (en) Preparation of semiconductor device
US3244555A (en) Semiconductor devices
GB1400313A (en) Method of producing semiconductor device
GB1292060A (en) A method of manufacturing a semiconductor device
US3685140A (en) Short channel field-effect transistors
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
US3641405A (en) Field-effect transistors with superior passivating films and method of making same
GB1569931A (en) Manufacture of semiconductor devices
US4734749A (en) Semiconductor mesa contact with low parasitic capacitance and resistance
JPS5661169A (en) Preparation of compound semiconductor device
US3825455A (en) Method of producing insulated-gate field-effect semiconductor device having a channel stopper region
JPS57102053A (en) Semiconductor device
JPS60192330A (ja) 半導体装置の製造方法
GB1361357A (en) Production of semiconductor devices
JPS5712588A (en) Manufacture of buried type heterojunction laser element
JPS54157496A (en) Manufacture of tunnel junction
JPS58178B2 (ja) 半導体装置の製造方法
JPS55134932A (en) Preparation of semiconductor device
JPS5728359A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee