GB1288029A - - Google Patents

Info

Publication number
GB1288029A
GB1288029A GB4816370A GB4816370A GB1288029A GB 1288029 A GB1288029 A GB 1288029A GB 4816370 A GB4816370 A GB 4816370A GB 4816370 A GB4816370 A GB 4816370A GB 1288029 A GB1288029 A GB 1288029A
Authority
GB
United Kingdom
Prior art keywords
arsenic
phosphorus
boron
march
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4816370A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45010376A external-priority patent/JPS504310B1/ja
Priority claimed from JP45017103A external-priority patent/JPS505908B1/ja
Priority claimed from JP45020826A external-priority patent/JPS4940111B1/ja
Priority claimed from JP45025627A external-priority patent/JPS501871B1/ja
Application filed filed Critical
Publication of GB1288029A publication Critical patent/GB1288029A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
GB4816370A 1970-02-07 1970-10-09 Expired GB1288029A (enExample)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP45010376A JPS504310B1 (enExample) 1970-02-07 1970-02-07
JP45017103A JPS505908B1 (enExample) 1970-03-02 1970-03-02
JP45020826A JPS4940111B1 (enExample) 1970-03-13 1970-03-13
JP45025627A JPS501871B1 (enExample) 1970-03-28 1970-03-28

Publications (1)

Publication Number Publication Date
GB1288029A true GB1288029A (enExample) 1972-09-06

Family

ID=27455384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4816370A Expired GB1288029A (enExample) 1970-02-07 1970-10-09

Country Status (4)

Country Link
DE (1) DE2049696C3 (enExample)
FR (1) FR2080965B1 (enExample)
GB (1) GB1288029A (enExample)
NL (1) NL162512C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821038A (en) * 1972-05-22 1974-06-28 Ibm Method for fabricating semiconductor structures with minimum crystallographic defects
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953034A (en) * 1961-07-13 1964-03-25 Clevite Corp Improvements in or relating to semiconductor devices
AT243318B (de) * 1962-09-21 1965-11-10 Siemens Ag Verfahren zur Herstellung hoher Dotierungsgrade in Halbleiterstoffen
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200250A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200251A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

Also Published As

Publication number Publication date
NL7014842A (enExample) 1971-08-10
NL162512B (nl) 1979-12-17
DE2049696C3 (de) 1982-02-18
DE2049696A1 (de) 1971-08-26
NL162512C (nl) 1980-05-16
FR2080965A1 (enExample) 1971-11-26
DE2049696B2 (de) 1981-06-11
FR2080965B1 (enExample) 1976-05-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years