GB1279674A - Electroluminescent semiconductor devices and methods of making them - Google Patents

Electroluminescent semiconductor devices and methods of making them

Info

Publication number
GB1279674A
GB1279674A GB32034/69A GB3203469A GB1279674A GB 1279674 A GB1279674 A GB 1279674A GB 32034/69 A GB32034/69 A GB 32034/69A GB 3203469 A GB3203469 A GB 3203469A GB 1279674 A GB1279674 A GB 1279674A
Authority
GB
United Kingdom
Prior art keywords
gallium
boat
gallium phosphide
doped
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32034/69A
Other languages
English (en)
Inventor
Ralph Andre Logan
Harry Gregory White
William Wiegmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1279674A publication Critical patent/GB1279674A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2907Materials being Group IIIA-VA materials
    • H10P14/2909Phosphides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418Phosphides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3438Doping during depositing
    • H10P14/3441Conductivity type
    • H10P14/3444P-type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/119Phosphides of gallium or indium

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
GB32034/69A 1968-06-28 1969-06-25 Electroluminescent semiconductor devices and methods of making them Expired GB1279674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74090368A 1968-06-28 1968-06-28

Publications (1)

Publication Number Publication Date
GB1279674A true GB1279674A (en) 1972-06-28

Family

ID=24978545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32034/69A Expired GB1279674A (en) 1968-06-28 1969-06-25 Electroluminescent semiconductor devices and methods of making them

Country Status (11)

Country Link
US (1) US3592704A (https=)
JP (1) JPS4814508B1 (https=)
BE (1) BE734071A (https=)
CH (1) CH494518A (https=)
CS (1) CS162686B2 (https=)
DE (1) DE1932130B2 (https=)
FR (1) FR2011768A1 (https=)
GB (1) GB1279674A (https=)
NL (1) NL149642B (https=)
PL (1) PL71396B1 (https=)
SE (1) SE342965B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
BE789732A (fr) * 1971-10-08 1973-02-01 Western Electric Co Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie
US3870575A (en) * 1972-03-21 1975-03-11 Sony Corp Fabricating a gallium phosphide device
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase

Also Published As

Publication number Publication date
SE342965B (https=) 1972-02-21
JPS4814508B1 (https=) 1973-05-08
DE1932130A1 (de) 1970-01-02
BE734071A (https=) 1969-11-17
DE1932130B2 (de) 1971-03-18
NL149642B (nl) 1976-05-17
US3592704A (en) 1971-07-13
FR2011768A1 (https=) 1970-03-06
CH494518A (de) 1970-07-31
PL71396B1 (https=) 1974-06-29
NL6909924A (https=) 1969-12-30
CS162686B2 (https=) 1975-07-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee