GB1270697A - Methods of forming semiconductor devices - Google Patents
Methods of forming semiconductor devicesInfo
- Publication number
- GB1270697A GB1270697A GB20677/69A GB2067769A GB1270697A GB 1270697 A GB1270697 A GB 1270697A GB 20677/69 A GB20677/69 A GB 20677/69A GB 2067769 A GB2067769 A GB 2067769A GB 1270697 A GB1270697 A GB 1270697A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- type
- conductor
- layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 230000000994 depressogenic effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910001928 zirconium oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/03—Diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/031—Diffusion at an edge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72352968A | 1968-04-23 | 1968-04-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1270697A true GB1270697A (en) | 1972-04-12 |
Family
ID=24906648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB20677/69A Expired GB1270697A (en) | 1968-04-23 | 1969-04-23 | Methods of forming semiconductor devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US3649386A (fr) |
JP (1) | JPS4810906B1 (fr) |
BE (1) | BE731392A (fr) |
DE (1) | DE1918845B2 (fr) |
FR (1) | FR2006784A1 (fr) |
GB (1) | GB1270697A (fr) |
NL (1) | NL6903469A (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4946800A (en) * | 1965-09-28 | 1990-08-07 | Li Chou H | Method for making solid-state device utilizing isolation grooves |
US6979877B1 (en) * | 1965-09-28 | 2005-12-27 | Li Chou H | Solid-state device |
US5082793A (en) * | 1965-09-28 | 1992-01-21 | Li Chou H | Method for making solid state device utilizing ion implantation techniques |
US6849918B1 (en) * | 1965-09-28 | 2005-02-01 | Chou H. Li | Miniaturized dielectrically isolated solid state device |
NL159817B (nl) * | 1966-10-05 | 1979-03-15 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
NL7010208A (fr) * | 1966-10-05 | 1972-01-12 | Philips Nv | |
NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
US3947299A (en) * | 1971-05-22 | 1976-03-30 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
US3814997A (en) * | 1971-06-11 | 1974-06-04 | Hitachi Ltd | Semiconductor device suitable for impatt diodes or varactor diodes |
FR2160759B1 (fr) * | 1971-11-26 | 1974-05-31 | Thomson Csf | |
JPS556299B2 (fr) * | 1972-03-24 | 1980-02-15 | ||
US3784847A (en) * | 1972-10-10 | 1974-01-08 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
JPS4960484A (fr) * | 1972-10-12 | 1974-06-12 | ||
US3858231A (en) * | 1973-04-16 | 1974-12-31 | Ibm | Dielectrically isolated schottky barrier structure and method of forming the same |
JPS5214594B2 (fr) * | 1973-10-17 | 1977-04-22 | ||
US4056415A (en) * | 1975-08-04 | 1977-11-01 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material |
US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
NL188550C (nl) * | 1981-07-02 | 1992-07-16 | Suwa Seikosha Kk | Werkwijze voor het vervaardigen van een halfgeleidersubstraat. |
JPS5814085U (ja) * | 1981-07-21 | 1983-01-28 | 石川島芝浦機械株式会社 | 移動農機のハンドル装置 |
DE3925216A1 (de) * | 1989-07-29 | 1991-01-31 | Ver Spezialmoebel Verwalt | Rolladen-verschluss fuer moebel oder dgl. |
US20060132996A1 (en) * | 2004-12-17 | 2006-06-22 | Poulton John W | Low-capacitance electro-static discharge protection |
FR2953062B1 (fr) * | 2009-11-24 | 2011-12-16 | St Microelectronics Tours Sas | Diode de protection bidirectionnelle basse tension |
US9412879B2 (en) | 2013-07-18 | 2016-08-09 | Texas Instruments Incorporated | Integration of the silicon IMPATT diode in an analog technology |
CN117945336A (zh) * | 2024-03-27 | 2024-04-30 | 芯联越州集成电路制造(绍兴)有限公司 | 半导体器件及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1450846A (fr) * | 1964-07-21 | 1966-06-24 | Siemens Ag | Composant à semi-conducteurs et son procédé de fabrication |
-
1968
- 1968-04-23 US US723529A patent/US3649386A/en not_active Expired - Lifetime
-
1969
- 1969-03-06 NL NL6903469A patent/NL6903469A/xx unknown
- 1969-04-11 BE BE731392D patent/BE731392A/xx unknown
- 1969-04-14 DE DE19691918845 patent/DE1918845B2/de not_active Withdrawn
- 1969-04-22 JP JP44030816A patent/JPS4810906B1/ja active Pending
- 1969-04-23 FR FR6912881A patent/FR2006784A1/fr active Granted
- 1969-04-23 GB GB20677/69A patent/GB1270697A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3649386A (en) | 1972-03-14 |
NL6903469A (fr) | 1969-10-27 |
FR2006784A1 (fr) | 1970-01-02 |
FR2006784B1 (fr) | 1974-06-14 |
DE1918845A1 (de) | 1970-03-12 |
BE731392A (fr) | 1969-09-15 |
DE1918845B2 (de) | 1971-06-16 |
JPS4810906B1 (fr) | 1973-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1270697A (en) | Methods of forming semiconductor devices | |
GB1060303A (en) | Semiconductor element and device and method of fabricating the same | |
GB972512A (en) | Methods of making semiconductor devices | |
GB1353489A (en) | Semiconductor device manufacture | |
GB1388486A (en) | Semiconductor device manufacture | |
GB1050478A (fr) | ||
GB1484834A (en) | Manufacture of complementary metal oxide semiconductor devices | |
GB1197403A (en) | Improvements relating to Semiconductor Devices | |
GB1165029A (en) | Semiconductor Monolithic Microcircuits. | |
GB1280022A (en) | Improvements in and relating to semiconductor devices | |
GB1012123A (en) | Improvements in or relating to semiconductor devices | |
GB1357432A (en) | Semiconductor devices | |
GB1352779A (en) | Method of manufacturing semiconductor devices | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB1366892A (en) | Methods of making semiconductor devices | |
GB1296562A (fr) | ||
GB1154049A (en) | Improvements in or relating to Avalanche Diodes. | |
GB1110321A (en) | Improvements in or relating to semiconductor devices | |
ES357987A1 (es) | Un dispositivo semiconductor. | |
GB1142068A (en) | Improvements in and relating to semiconductor devices | |
GB1262502A (en) | Improvements in or relating to semiconductor devices and methods of making them | |
GB1028485A (en) | Semiconductor devices | |
GB1485183A (en) | Integrated circuit devices and their fabrication | |
GB1066088A (en) | Semiconductor devices |