GB1267329A - Method of treating semiconductor devices - Google Patents

Method of treating semiconductor devices

Info

Publication number
GB1267329A
GB1267329A GB36441/71A GB3644171A GB1267329A GB 1267329 A GB1267329 A GB 1267329A GB 36441/71 A GB36441/71 A GB 36441/71A GB 3644171 A GB3644171 A GB 3644171A GB 1267329 A GB1267329 A GB 1267329A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
march
silicon
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36441/71A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1267329A publication Critical patent/GB1267329A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Formation Of Insulating Films (AREA)
GB36441/71A 1968-03-20 1969-03-03 Method of treating semiconductor devices Expired GB1267329A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71457768A 1968-03-20 1968-03-20

Publications (1)

Publication Number Publication Date
GB1267329A true GB1267329A (en) 1972-03-15

Family

ID=24870603

Family Applications (2)

Application Number Title Priority Date Filing Date
GB36441/71A Expired GB1267329A (en) 1968-03-20 1969-03-03 Method of treating semiconductor devices
GB1266002D Expired GB1266002A (enExample) 1968-03-20 1969-03-03

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1266002D Expired GB1266002A (enExample) 1968-03-20 1969-03-03

Country Status (7)

Country Link
US (1) US3556879A (enExample)
DE (1) DE1913718C2 (enExample)
ES (1) ES364942A1 (enExample)
FR (1) FR2005220A1 (enExample)
GB (2) GB1267329A (enExample)
MY (2) MY7300405A (enExample)
NL (1) NL163369C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913909B1 (enExample) * 1970-05-04 1974-04-03
US4007297A (en) * 1971-09-20 1977-02-08 Rca Corporation Method of treating semiconductor device to improve its electrical characteristics
US3887726A (en) * 1973-06-29 1975-06-03 Ibm Method of chemical vapor deposition to provide silicon dioxide films with reduced surface state charge on semiconductor substrates
US4007294A (en) * 1974-06-06 1977-02-08 Rca Corporation Method of treating a layer of silicon dioxide
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
DE2829983A1 (de) * 1978-07-07 1980-01-24 Siemens Ag Verfahren zum gettern von halbleiterbauelementen und integrierten halbleiterschaltkreisen
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US4716451A (en) * 1982-12-10 1987-12-29 Rca Corporation Semiconductor device with internal gettering region
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
US5244843A (en) 1991-12-17 1993-09-14 Intel Corporation Process for forming a thin oxide layer
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor
US5891809A (en) * 1995-09-29 1999-04-06 Intel Corporation Manufacturable dielectric formed using multiple oxidation and anneal steps
US5966623A (en) * 1995-10-25 1999-10-12 Eastman Kodak Company Metal impurity neutralization within semiconductors by fluorination
TWI456649B (zh) * 2011-10-27 2014-10-11 Atomic Energy Council 去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法
US8685840B2 (en) * 2011-12-07 2014-04-01 Institute Of Nuclear Energy Research, Atomic Energy Council In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
DE1186950C2 (de) * 1960-02-15 1975-10-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum entfernen von unerwuenschten metallen aus einem einen pn-uebergang aufweisenden silicium-halbleiterkoerper
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
GB997299A (en) * 1962-05-11 1965-07-07 Ferranti Ltd Improvements relating to the coating of semiconductor bodies with silicon dioxide
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3298880A (en) * 1962-08-24 1967-01-17 Hitachi Ltd Method of producing semiconductor devices
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking

Also Published As

Publication number Publication date
MY7300405A (en) 1973-12-31
FR2005220A1 (fr) 1969-12-12
DE1913718A1 (de) 1969-10-09
FR2005220B1 (enExample) 1974-02-22
NL163369B (nl) 1980-03-17
NL6904221A (enExample) 1969-09-23
ES364942A1 (es) 1971-02-16
US3556879A (en) 1971-01-19
GB1266002A (enExample) 1972-03-08
DE1913718C2 (de) 1983-01-20
NL163369C (nl) 1980-08-15
MY7500139A (en) 1975-12-31

Similar Documents

Publication Publication Date Title
USRE28385E (en) Method of treating semiconductor devices
GB1454237A (en) Method for manufacturing a semiconductor device
US3556879A (en) Method of treating semiconductor devices
US3520722A (en) Fabrication of semiconductive devices with silicon nitride coatings
US4364779A (en) Fabrication of semiconductor devices including double annealing steps for radiation hardening
Revesz Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films
GB1094068A (en) Semiconductive devices and methods of producing them
GB1242896A (en) Semiconductor device and method of fabrication
JPS5833693B2 (ja) 半導体装置の製造方法
IE32133L (en) Semiconductor insulated gate field effect device
GB1079168A (en) Semiconductor devices
GB1090649A (en) Surface treatment for semiconductor devices
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
Nagasawa et al. Electrical and optical properties of reduced stannic oxide crystals
JPS55113335A (en) Manufacture of semiconductor device
GB954915A (en) Method of stabilising the surface of semi-conductor bodies comprising pn-junctions
US3303069A (en) Method of manufacturing semiconductor devices
US3668095A (en) Method of manufacturing a metallic oxide film on a substrate
GB1079046A (en) Improvements in and relating to semiconductor devices
GB1299811A (en) Semiconductor integrated circuit device
US3698945A (en) Method of coating pn junction of semiconductor device with mixture of sio2 and tio2
US3629666A (en) Semiconductor device and method of manufacturing same
JPS5928369A (ja) 半導体装置用キヤパシタの製造方法
GB1107699A (en) A method of producing semiconductor devices
US3702786A (en) Mos transistor with aluminum oxide gate dielectric