GB1253231A - - Google Patents
Info
- Publication number
- GB1253231A GB1253231A GB1253231DA GB1253231A GB 1253231 A GB1253231 A GB 1253231A GB 1253231D A GB1253231D A GB 1253231DA GB 1253231 A GB1253231 A GB 1253231A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ohm
- specific resistance
- zone
- rod
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,253,231. Zone-melting. H. F. A. TOPSOE. 21 Jan., 1969 [4 Jan., 1968], No. 585/68. Heading B1S. In the passage of a floating molten zone through a relatively thick silicon supply rod from a relatively thin silicon seed rod, a product consisting of a monocrystalline section which is dislocation free and has a specific resistance greater than 0.1 ohm. cm. is crystallized on to a doped section containing arsenic and having a specific resistance of 0.001-0.03 ohm. cm. or containing antimony and having a specific resistance of 0.004-0.08 ohm. cm. The doped section may be in the seed or rod. The initial stage of zone-melting may be effected sufficiently rapidly to avoid depletion of dopant. before establishment of the dislocation-free monocrystalline structure. The process may be effected in a vacuum so that the product is substantially free of dopant.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB58568 | 1968-01-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1253231A true GB1253231A (en) | 1971-11-10 |
Family
ID=9706970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1253231D Expired GB1253231A (en) | 1968-01-04 | 1968-01-04 |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB1253231A (en) |
| NL (1) | NL6900143A (en) |
-
1968
- 1968-01-04 GB GB1253231D patent/GB1253231A/en not_active Expired
-
1969
- 1969-01-03 NL NL6900143A patent/NL6900143A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6900143A (en) | 1969-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2727840A (en) | Methods of producing semiconductive bodies | |
| US2957789A (en) | Semiconductor devices and methods of preparing the same | |
| GB1326077A (en) | Method for fabricating an electroluminescent semiconductor diode | |
| GB1340671A (en) | Process for epitaxially growing semiconductor crystals of predetermined conductivity type | |
| GB1430883A (en) | Non-crucible zone melting of crystalline semiconductor rods | |
| GB1393337A (en) | Method of growing a single crystal film | |
| GB1253231A (en) | ||
| GB1336672A (en) | Methods of epitaxially depositing a semiconductor compound | |
| GB1229508A (en) | ||
| GB871839A (en) | Improvements in or relating to processes for the production of semiconductive bodies | |
| GB1183247A (en) | Gallium Arsenide | |
| GB1309347A (en) | Production of doped gallium arsenide | |
| GB1081827A (en) | Improvements in or relating to a floating zone process | |
| GB1011973A (en) | Improvements in or relating to methods of growing crystals of semiconductor materials | |
| GB921037A (en) | Improvements in or relating to the preparation of single crystals of silicon | |
| GB1059916A (en) | The formation of single crystals | |
| GB1285853A (en) | Improvements in or relating to the manufacture of semiconductor monocrystals | |
| GB931692A (en) | A process for doping semi-conductor material with boron | |
| GB751126A (en) | Improvements in or relating to methods of producing semi-conductive monocrystals | |
| GB1374056A (en) | Production of monocrystalline semiconductor rods | |
| GB1261065A (en) | Method for growing single crystals | |
| GB755845A (en) | Improvements relating to semi-conductors | |
| GB1426511A (en) | Method for producing a semiconductor device having a very small deviation in lattice constant | |
| GB1332348A (en) | Silicon carbide junction diode | |
| GB1316316A (en) | Method of producing monocrystals of current-conducting or semi conductive materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |