GB1253231A - - Google Patents

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Publication number
GB1253231A
GB1253231A GB1253231DA GB1253231A GB 1253231 A GB1253231 A GB 1253231A GB 1253231D A GB1253231D A GB 1253231DA GB 1253231 A GB1253231 A GB 1253231A
Authority
GB
United Kingdom
Prior art keywords
ohm
specific resistance
zone
rod
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1253231A publication Critical patent/GB1253231A/en
Expired legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge
    • C30B13/24Heating of the molten zone by irradiation or electric discharge using electromagnetic waves

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,253,231. Zone-melting. H. F. A. TOPSOE. 21 Jan., 1969 [4 Jan., 1968], No. 585/68. Heading B1S. In the passage of a floating molten zone through a relatively thick silicon supply rod from a relatively thin silicon seed rod, a product consisting of a monocrystalline section which is dislocation free and has a specific resistance greater than 0.1 ohm. cm. is crystallized on to a doped section containing arsenic and having a specific resistance of 0.001-0.03 ohm. cm. or containing antimony and having a specific resistance of 0.004-0.08 ohm. cm. The doped section may be in the seed or rod. The initial stage of zone-melting may be effected sufficiently rapidly to avoid depletion of dopant. before establishment of the dislocation-free monocrystalline structure. The process may be effected in a vacuum so that the product is substantially free of dopant.
GB1253231D 1968-01-04 1968-01-04 Expired GB1253231A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB58568 1968-01-04

Publications (1)

Publication Number Publication Date
GB1253231A true GB1253231A (en) 1971-11-10

Family

ID=9706970

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1253231D Expired GB1253231A (en) 1968-01-04 1968-01-04

Country Status (2)

Country Link
GB (1) GB1253231A (en)
NL (1) NL6900143A (en)

Also Published As

Publication number Publication date
NL6900143A (en) 1969-07-08

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees