GB1248051A - Method of making insulated gate field effect transistors - Google Patents

Method of making insulated gate field effect transistors

Info

Publication number
GB1248051A
GB1248051A GB00100/68A GB1010068A GB1248051A GB 1248051 A GB1248051 A GB 1248051A GB 00100/68 A GB00100/68 A GB 00100/68A GB 1010068 A GB1010068 A GB 1010068A GB 1248051 A GB1248051 A GB 1248051A
Authority
GB
United Kingdom
Prior art keywords
layer
grooves
type
substrate
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00100/68A
Other languages
English (en)
Inventor
Peter Joseph Talbot-Mellor
Keith James Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Priority to GB00100/68A priority Critical patent/GB1248051A/en
Priority to NL6902936A priority patent/NL6902936A/xx
Priority to DE19691910297 priority patent/DE1910297A1/de
Priority to FR6905631A priority patent/FR2003068A7/fr
Publication of GB1248051A publication Critical patent/GB1248051A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
GB00100/68A 1968-03-01 1968-03-01 Method of making insulated gate field effect transistors Expired GB1248051A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB00100/68A GB1248051A (en) 1968-03-01 1968-03-01 Method of making insulated gate field effect transistors
NL6902936A NL6902936A (https=) 1968-03-01 1969-02-25
DE19691910297 DE1910297A1 (de) 1968-03-01 1969-02-28 Feldeffekttransistor mit isoliertem Gate und Verfahren zu dessen Herstellung
FR6905631A FR2003068A7 (https=) 1968-03-01 1969-03-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB00100/68A GB1248051A (en) 1968-03-01 1968-03-01 Method of making insulated gate field effect transistors

Publications (1)

Publication Number Publication Date
GB1248051A true GB1248051A (en) 1971-09-29

Family

ID=9961500

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00100/68A Expired GB1248051A (en) 1968-03-01 1968-03-01 Method of making insulated gate field effect transistors

Country Status (4)

Country Link
DE (1) DE1910297A1 (https=)
FR (1) FR2003068A7 (https=)
GB (1) GB1248051A (https=)
NL (1) NL6902936A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3324017A1 (de) * 1982-07-05 1984-01-05 Matsushita Electronics Corp., Kadoma, Osaka Isolierschicht-feldeffekt-transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US5160491A (en) * 1986-10-21 1992-11-03 Texas Instruments Incorporated Method of making a vertical MOS transistor
US5124764A (en) * 1986-10-21 1992-06-23 Texas Instruments Incorporated Symmetric vertical MOS transistor with improved high voltage operation
US5016067A (en) * 1988-04-11 1991-05-14 Texas Instruments Incorporated Vertical MOS transistor
US5016068A (en) * 1988-04-15 1991-05-14 Texas Instruments Incorporated Vertical floating-gate transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3324017A1 (de) * 1982-07-05 1984-01-05 Matsushita Electronics Corp., Kadoma, Osaka Isolierschicht-feldeffekt-transistor

Also Published As

Publication number Publication date
DE1910297A1 (de) 1969-11-13
FR2003068A7 (https=) 1969-11-07
NL6902936A (https=) 1969-09-03

Similar Documents

Publication Publication Date Title
GB1447849A (en) Stabilized semiconductor devices and method of making same
GB1153428A (en) Improvements in Semiconductor Devices.
GB1465244A (en) Deep depletion insulated gate field effect transistors
GB1442464A (en) Charge-coupled devices
US4333224A (en) Method of fabricating polysilicon/silicon junction field effect transistors
GB1242896A (en) Semiconductor device and method of fabrication
US5012305A (en) High speed junction field effect transistor for use in bipolar integrated circuits
GB1396896A (en) Semiconductor devices including field effect and bipolar transistors
US4316203A (en) Insulated gate field effect transistor
KR910001886A (ko) 반도체장치와 그 제조방법
GB1129200A (en) High frequency field effect transistor
EP0071335B1 (en) Field effect transistor
GB1210090A (en) Insulated gate field effect transistor
US4546366A (en) Polysilicon/silicon junction field effect transistors and integrated circuits (POSFET)
GB1262000A (en) A semiconductor device and a method for manufacturing the same
GB1248051A (en) Method of making insulated gate field effect transistors
US3430112A (en) Insulated gate field effect transistor with channel portions of different conductivity
GB1476790A (en) Semiconductor device including an insulated gate field effect transistor and method for its manufacture
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
GB1073135A (en) Semiconductor current limiter
US3889287A (en) Mnos memory matrix
GB1422287A (en) Insulated gate transistor
JPS5632757A (en) Insulated gate type transistor and integrated circuit
GB1423449A (en) Semiconductor device
GB1045429A (en) Transistors