GB1239560A - - Google Patents
Info
- Publication number
- GB1239560A GB1239560A GB1239560DA GB1239560A GB 1239560 A GB1239560 A GB 1239560A GB 1239560D A GB1239560D A GB 1239560DA GB 1239560 A GB1239560 A GB 1239560A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chemical reaction
- whisker
- supply material
- sept
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/17—Vapor-liquid-solid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66953567A | 1967-09-21 | 1967-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1239560A true GB1239560A (enrdf_load_stackoverflow) | 1971-07-21 |
Family
ID=24686689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1239560D Expired GB1239560A (enrdf_load_stackoverflow) | 1967-09-21 | 1968-09-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3505127A (enrdf_load_stackoverflow) |
| BE (1) | BE720982A (enrdf_load_stackoverflow) |
| FR (1) | FR1591631A (enrdf_load_stackoverflow) |
| GB (1) | GB1239560A (enrdf_load_stackoverflow) |
| NL (1) | NL6813504A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
| DE102005029162B4 (de) * | 2005-06-23 | 2012-12-27 | Wilfried von Ammon | Solarzelle mit einer Whisker-Struktur und Verfahren zu deren Hestellung |
| US8153482B2 (en) * | 2008-09-22 | 2012-04-10 | Sharp Laboratories Of America, Inc. | Well-structure anti-punch-through microwire device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE544843A (enrdf_load_stackoverflow) * | 1955-02-25 | |||
| US3346414A (en) * | 1964-01-28 | 1967-10-10 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
-
1967
- 1967-09-21 US US669535A patent/US3505127A/en not_active Expired - Lifetime
-
1968
- 1968-09-17 BE BE720982D patent/BE720982A/xx unknown
- 1968-09-20 GB GB1239560D patent/GB1239560A/en not_active Expired
- 1968-09-20 NL NL6813504A patent/NL6813504A/xx unknown
- 1968-09-20 FR FR1591631D patent/FR1591631A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE720982A (enrdf_load_stackoverflow) | 1969-03-03 |
| FR1591631A (enrdf_load_stackoverflow) | 1970-05-04 |
| NL6813504A (enrdf_load_stackoverflow) | 1969-03-25 |
| US3505127A (en) | 1970-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1070991A (en) | Processes for the growth of crystalline bodies | |
| GB1469392A (en) | Thermal printing device | |
| GB1160213A (en) | A Method of Growing Semiconductor Crystals | |
| GB1239560A (enrdf_load_stackoverflow) | ||
| JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
| Eustathopoulos et al. | Thermodynamic Study of Solid/Liquid Interface Tension for a Binary Metal System. Pt. 3. Experimental Study of the Cu-Pb System--Application to the Determination of the Interface Tension of Pure Cu | |
| JPS52147064A (en) | Semiconductor device | |
| GB1226829A (enrdf_load_stackoverflow) | ||
| JPS51126050A (en) | Semi-conductor equipment | |
| JPS5645899A (en) | Vapor phase growing method for gallium nitride | |
| JPS5294773A (en) | Semiconductor element and its manufacture | |
| JPS51111084A (en) | Semiconductor device manufucturing proceso | |
| GB1115140A (en) | Semiconductors | |
| JPS5649520A (en) | Vapor growth of compound semiconductor | |
| JPS5321570A (en) | Bonding method of semiconductor substrates | |
| JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
| GB1024727A (en) | Method of fabricating semiconductor devices | |
| JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
| JPS5326663A (en) | Manu facture of semiconductor device | |
| GB1037909A (en) | Improvements relating to methods of growing semiconductor substances | |
| JPS5257098A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
| FR2058385A1 (en) | Diode with schottky barrier | |
| Kardonskiy et al. | MECHANISM OF TITANIUM IMPACT ON BRITTLE TENDENCY IN DELAYED DEFORMATION OF MARTENSITE-AGING STEELS, ABSTRACT ONLY | |
| JPS5580722A (en) | Arsenic recovering method | |
| JPS52146175A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |