GB1239560A - - Google Patents
Info
- Publication number
- GB1239560A GB1239560A GB1239560DA GB1239560A GB 1239560 A GB1239560 A GB 1239560A GB 1239560D A GB1239560D A GB 1239560DA GB 1239560 A GB1239560 A GB 1239560A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chemical reaction
- whisker
- supply material
- sept
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/17—Vapor-liquid-solid
Abstract
1,239,560. Crystallizing. WESTERN ELECTRIC CO. Inc. 20 Sept., 1968 [21 Sept., 1967], No. 44816/68. Heading B1S. A whisker having a narrow tip is grown on a wafer of the same material from a liquid alloy zone into which supply material is absorbed from the vapour state and from which the alloy-forming agent is progressively removed by (a) evaporation, (b) incorporation in the whisker, (c) formation of a gas by a chemical reaction, or (d) conversion into supply material by a chemical reaction. The agent may be placed on the wafer at one or more sites manually; or by evaporation or electroplating, using a mask to form a pattern if desired. It may be Au, Sn, Cu, or Ga. The absorbed supply material may be condensed from its vapour or formed by a chemical reaction. It may be Cu, Si, SiC, or GaAs. A silicon whisker may have a length of 1 mm and a tip with a radius of curvature less than 1 micron.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66953567A | 1967-09-21 | 1967-09-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1239560A true GB1239560A (en) | 1971-07-21 |
Family
ID=24686689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1239560D Expired GB1239560A (en) | 1967-09-21 | 1968-09-20 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3505127A (en) |
BE (1) | BE720982A (en) |
FR (1) | FR1591631A (en) |
GB (1) | GB1239560A (en) |
NL (1) | NL6813504A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
DE102005029162B4 (en) * | 2005-06-23 | 2012-12-27 | Wilfried von Ammon | Solar cell with a whisker structure and method for its production |
US8153482B2 (en) * | 2008-09-22 | 2012-04-10 | Sharp Laboratories Of America, Inc. | Well-structure anti-punch-through microwire device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE544843A (en) * | 1955-02-25 | |||
US3346414A (en) * | 1964-01-28 | 1967-10-10 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
-
1967
- 1967-09-21 US US669535A patent/US3505127A/en not_active Expired - Lifetime
-
1968
- 1968-09-17 BE BE720982D patent/BE720982A/xx unknown
- 1968-09-20 NL NL6813504A patent/NL6813504A/xx unknown
- 1968-09-20 FR FR1591631D patent/FR1591631A/fr not_active Expired
- 1968-09-20 GB GB1239560D patent/GB1239560A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE720982A (en) | 1969-03-03 |
US3505127A (en) | 1970-04-07 |
FR1591631A (en) | 1970-05-04 |
NL6813504A (en) | 1969-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |