GB1229385A - - Google Patents
Info
- Publication number
- GB1229385A GB1229385A GB1229385DA GB1229385A GB 1229385 A GB1229385 A GB 1229385A GB 1229385D A GB1229385D A GB 1229385DA GB 1229385 A GB1229385 A GB 1229385A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon nitride
- oct
- igfet
- layer
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803392 DE1803392A1 (de) | 1968-10-16 | 1968-10-16 | Schutzvorrichtung fuer einen Feldeffekttransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1229385A true GB1229385A (de) | 1971-04-21 |
Family
ID=5710660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1229385D Expired GB1229385A (de) | 1968-10-16 | 1969-10-15 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT303819B (de) |
| CH (1) | CH497795A (de) |
| DE (1) | DE1803392A1 (de) |
| FR (1) | FR2020823A1 (de) |
| GB (1) | GB1229385A (de) |
| NL (1) | NL6913792A (de) |
| SE (1) | SE343431B (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2247779A (en) * | 1990-09-05 | 1992-03-11 | Samsung Electronics Co Ltd | Semiconductor device tolerant of electrostatic discharge |
| US7728363B2 (en) | 2006-11-09 | 2010-06-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Protective structure for semiconductor sensors |
| US9514995B1 (en) | 2015-05-21 | 2016-12-06 | Globalfoundries Inc. | Implant-free punch through doping layer formation for bulk FinFET structures |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5910587B2 (ja) * | 1977-08-10 | 1984-03-09 | 株式会社日立製作所 | 半導体装置の保護装置 |
-
1968
- 1968-10-16 DE DE19681803392 patent/DE1803392A1/de active Pending
-
1969
- 1969-09-10 NL NL6913792A patent/NL6913792A/xx unknown
- 1969-10-13 CH CH1531069A patent/CH497795A/de not_active IP Right Cessation
- 1969-10-14 AT AT968469A patent/AT303819B/de not_active IP Right Cessation
- 1969-10-15 GB GB1229385D patent/GB1229385A/en not_active Expired
- 1969-10-15 FR FR6935296A patent/FR2020823A1/fr not_active Withdrawn
- 1969-10-16 SE SE1424169A patent/SE343431B/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2247779A (en) * | 1990-09-05 | 1992-03-11 | Samsung Electronics Co Ltd | Semiconductor device tolerant of electrostatic discharge |
| US7728363B2 (en) | 2006-11-09 | 2010-06-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Protective structure for semiconductor sensors |
| US9514995B1 (en) | 2015-05-21 | 2016-12-06 | Globalfoundries Inc. | Implant-free punch through doping layer formation for bulk FinFET structures |
Also Published As
| Publication number | Publication date |
|---|---|
| CH497795A (de) | 1970-10-15 |
| SE343431B (de) | 1972-03-06 |
| DE1803392A1 (de) | 1970-06-18 |
| AT303819B (de) | 1972-12-11 |
| FR2020823A1 (de) | 1970-07-17 |
| NL6913792A (de) | 1970-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |