GB1228406A - - Google Patents

Info

Publication number
GB1228406A
GB1228406A GB1228406DA GB1228406A GB 1228406 A GB1228406 A GB 1228406A GB 1228406D A GB1228406D A GB 1228406DA GB 1228406 A GB1228406 A GB 1228406A
Authority
GB
United Kingdom
Prior art keywords
pulling
rod
pressure
june
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1228406A publication Critical patent/GB1228406A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1228406D 1966-06-13 1968-06-20 Expired GB1228406A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0104258 1966-06-13
DES0110434 1967-06-21

Publications (1)

Publication Number Publication Date
GB1228406A true GB1228406A (de) 1971-04-15

Family

ID=25998491

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1228406D Expired GB1228406A (de) 1966-06-13 1968-06-20

Country Status (7)

Country Link
CH (1) CH517525A (de)
DE (1) DE1644009B2 (de)
DK (1) DK135154B (de)
FR (1) FR94593E (de)
GB (1) GB1228406A (de)
NL (1) NL6804204A (de)
SE (1) SE345969B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0874069A1 (de) * 1997-04-22 1998-10-28 Komatsu Electronic Metals Co., Ltd Verfahren zur Feststellung des Verunreinigungsgehaltes in einem Kristall, Verfahren und Vorrichtung zum Ziehen eines Einkristalls
US6004393A (en) * 1997-04-22 1999-12-21 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
CN103975097A (zh) * 2011-10-06 2014-08-06 埃尔凯姆太阳能公司 用于生产硅单晶和多晶硅锭的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0874069A1 (de) * 1997-04-22 1998-10-28 Komatsu Electronic Metals Co., Ltd Verfahren zur Feststellung des Verunreinigungsgehaltes in einem Kristall, Verfahren und Vorrichtung zum Ziehen eines Einkristalls
US6004393A (en) * 1997-04-22 1999-12-21 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
US6019837A (en) * 1997-04-22 2000-02-01 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
CN103975097A (zh) * 2011-10-06 2014-08-06 埃尔凯姆太阳能公司 用于生产硅单晶和多晶硅锭的方法

Also Published As

Publication number Publication date
FR94593E (fr) 1969-09-12
CH517525A (de) 1972-01-15
DK135154B (da) 1977-03-14
DE1644009A1 (de) 1970-09-24
SE345969B (de) 1972-06-19
DK135154C (de) 1977-08-29
DE1644009B2 (de) 1975-10-09
NL6804204A (de) 1968-12-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee