DK135154C - - Google Patents

Info

Publication number
DK135154C
DK135154C DK294968A DK294968A DK135154C DK 135154 C DK135154 C DK 135154C DK 294968 A DK294968 A DK 294968A DK 294968 A DK294968 A DK 294968A DK 135154 C DK135154 C DK 135154C
Authority
DK
Denmark
Application number
DK294968A
Other languages
Danish (da)
Other versions
DK135154B (da
Inventor
R Kappelmeyer
M H Kellerbauer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK135154B publication Critical patent/DK135154B/da
Application granted granted Critical
Publication of DK135154C publication Critical patent/DK135154C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK294968A 1966-06-13 1968-06-20 Fremgangsmåde til fremstilling af stavformede siliciumkrystaller med homogen antimondotering. DK135154B (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0104258 1966-06-13
DES0110434 1967-06-21

Publications (2)

Publication Number Publication Date
DK135154B DK135154B (da) 1977-03-14
DK135154C true DK135154C (de) 1977-08-29

Family

ID=25998491

Family Applications (1)

Application Number Title Priority Date Filing Date
DK294968A DK135154B (da) 1966-06-13 1968-06-20 Fremgangsmåde til fremstilling af stavformede siliciumkrystaller med homogen antimondotering.

Country Status (7)

Country Link
CH (1) CH517525A (de)
DE (1) DE1644009B2 (de)
DK (1) DK135154B (de)
FR (1) FR94593E (de)
GB (1) GB1228406A (de)
NL (1) NL6804204A (de)
SE (1) SE345969B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JPH10291892A (ja) * 1997-04-22 1998-11-04 Komatsu Electron Metals Co Ltd 結晶中の不純物濃度検出方法および単結晶の製造方法並びに単結晶引上げ装置
US6004393A (en) * 1997-04-22 1999-12-21 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter

Also Published As

Publication number Publication date
DE1644009A1 (de) 1970-09-24
DE1644009B2 (de) 1975-10-09
FR94593E (fr) 1969-09-12
SE345969B (de) 1972-06-19
DK135154B (da) 1977-03-14
NL6804204A (de) 1968-12-23
GB1228406A (de) 1971-04-15
CH517525A (de) 1972-01-15

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Legal Events

Date Code Title Description
PBP Patent lapsed