GB1227331A - - Google Patents

Info

Publication number
GB1227331A
GB1227331A GB1735067A GB1227331DA GB1227331A GB 1227331 A GB1227331 A GB 1227331A GB 1735067 A GB1735067 A GB 1735067A GB 1227331D A GB1227331D A GB 1227331DA GB 1227331 A GB1227331 A GB 1227331A
Authority
GB
United Kingdom
Prior art keywords
crystal
molten zone
cathode
frusto
hearth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1735067A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1227331A publication Critical patent/GB1227331A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/16Heating of the melt or the crystallised materials by irradiation or electric discharge
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905Electron beam
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1016Apparatus with means for treating single-crystal [e.g., heat treating]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1735067A 1967-04-14 1967-04-14 Expired GB1227331A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1735067 1967-04-14

Publications (1)

Publication Number Publication Date
GB1227331A true GB1227331A (da) 1971-04-07

Family

ID=10093642

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1735067A Expired GB1227331A (da) 1967-04-14 1967-04-14

Country Status (2)

Country Link
US (1) US3634045A (da)
GB (1) GB1227331A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4122292A (en) * 1976-09-13 1978-10-24 Viktor Nikolaevich Karinsky Electric arc heating vacuum apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
BE542056A (da) * 1954-10-15
US3131051A (en) * 1959-09-23 1964-04-28 Stauffer Chemical Co Process and apparatus for refining loosely compacted refractory metals in an electron beam furnace
US3267529A (en) * 1961-10-04 1966-08-23 Heraeus Gmbh W C Apparatus for melting metals under high vacuum
US3343828A (en) * 1962-03-30 1967-09-26 Air Reduction High vacuum furnace
US3377419A (en) * 1966-06-29 1968-04-09 Lokomotivbau Elektrotech Electron beam multichamber high vacuum furnace

Also Published As

Publication number Publication date
US3634045A (en) 1972-01-11

Similar Documents

Publication Publication Date Title
US3291650A (en) Control of crystal size
US3796552A (en) Crucible
GB1311028A (en) Producing monocrystals
GB778123A (en) Crystal production
GB1102989A (en) Method and apparatus for producing crystalline semiconductor ribbon
GB1154240A (en) Improvements in and relating to methods of Crystal Pulling
GB1286024A (en) Method of producing single semiconductor crystals
GB1031136A (en) A method of producing monocrystalline silicon carbide
JPS6259594A (ja) 結晶の引上げ方法
GB1227331A (da)
US3977934A (en) Silicon manufacture
JPS6465086A (en) Apparatus and process for producing single crystal rod
GB1216522A (en) Zone-by-zone melting a rod
GB1075706A (en) Production of dislocation-free single crystals of semiconductor material
GB1488940A (en) Production of monocrystals by the verneuil method
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
US3567397A (en) Apparatus for obtaining a dross-free crystalline growth melt
GB788375A (en) Improvements in or relating to the control of the internal junction structure of a crystal
GB1365724A (en) Methods of manufacturing single crystals of semiconductor mater ial
JPH08750B2 (ja) 高圧合成装置を用いた単結晶育成方法および装置
DE2528585A1 (de) Verfahren zur herstellung von massiven einkristallen aus alpha- aluminiumoxyd
GB1148007A (en) Improvements in or relating to a method of and apparatus for crucible-free zone melting
GB1509030A (en) Method and apparatus for forming refractory tubing
JPS54134964A (en) Manufacture of carbide field emitter
JPS52104474A (en) Control method for crystal growth

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee